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EGP20D-BP PDF预览

EGP20D-BP

更新时间: 2024-11-27 13:07:39
品牌 Logo 应用领域
美微科 - MCC 整流二极管高效整流二极管
页数 文件大小 规格书
3页 84K
描述
Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2

EGP20D-BP 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:DO-15包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.32Is Samacsys:N
其他特性:LOW LEAKAGE CURRENT应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:75 A元件数量:1
相数:1端子数量:2
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.05 µs
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

EGP20D-BP 数据手册

 浏览型号EGP20D-BP的Datasheet PDF文件第2页浏览型号EGP20D-BP的Datasheet PDF文件第3页 
M C C  
EGP20A  
THRU  
EGP20K  
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21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
2.0 Amp Glass  
Passivated High  
Efficient Rectifiers  
50 to 800 Volts  
Features  
·
·
·
·
Superfast recovery time for high efficiency  
Glass passivated cavity-free junction, Plastic case  
Low forward voltage, high current capability  
Low leakage current  
Maximum Ratings  
·
·
·
Operating Temperature: -55OC to +150OC  
DO-15  
Storage Temperature: -55OC to +150OC  
Typical Thermal Resistance: 40OC/W Junction to Ambient  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
Maximum DC  
Blocking  
Voltage  
MCC  
Part Number  
Maximum  
RMS Voltage  
D
EGP20A  
EGP20B  
EGP20D  
EGP20F  
EGP20G  
EGP20J  
EGP20K  
50V  
35V  
70V  
50V  
100V  
200V  
300V  
400V  
600V  
800V  
100V  
200V  
300V  
400V  
600V  
800V  
140V  
210V  
280V  
420V  
560V  
A
Cathode  
Mark  
B
Electrical Characteristics @ 25OC Unless Otherwise Specified  
D
Maximum Average  
Forward Current  
IF(AV)  
2.0 A  
TA = 55OC  
C
Peak Forward Surge  
Current  
IFSM  
75A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
EGP20A-20D  
EGP20F-20G  
EGP20J-20K  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IFM = 2.0A;  
DIMENSIONS  
VF  
0.95V  
1.25V  
1.70V  
INCHES  
MIN  
MM  
MIN  
DIM  
A
MAX  
.300  
.140  
.034  
---  
MAX  
7.60  
3.60  
.90  
NOTE  
.230  
5.80  
2.60  
.70  
B
C
.104  
.026  
IR  
5.0uA  
100uA  
TA = 25OC  
D
1.000  
25.40  
---  
TA = 125OC  
Maximum Reverse  
Recovery Time  
EGP20A-20D  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
T
rr  
50nS  
75nS  
EGP20F-20K  
Typical Junction  
Capacitance  
EGP20A-20D  
EGP20F-20K  
Measured at  
1.0MHz,  
VR=4.0V  
CJ  
70pF  
45pF  
www.mccsemi.com  

EGP20D-BP 替代型号

型号 品牌 替代类型 描述 数据表
EGP20D-TP MCC

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Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2

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