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EE-SY1200

更新时间： 2024-02-10 11:49:11
品牌 Logo 应用领域
欧姆龙 - OMRON 光电
页数 文件大小 规格书
4页 294K
描述
Photomicrosensor (Reflective)

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EE-SY1200 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：unknown风险等级：1.79
主体宽度：1.9 mm主体高度：1.1 mm
主体长度或直径：3.2 mmJESD-609代码：e4
安装特点：SURFACE MOUNT最高工作温度：85 °C
最低工作温度：-25 °C封装形状/形式：RECTANGULAR
传感器/换能器类型：LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE表面贴装：YES
端子面层：Gold (Au)端接类型：SOLDER
Base Number Matches：1

EE-SY1200 数据手册

 浏览型号EE-SY1200的Datasheet PDF文件第2页浏览型号EE-SY1200的Datasheet PDF文件第3页浏览型号EE-SY1200的Datasheet PDF文件第4页 
CSM_EE-SY1200_E_1_1  
EE-SY1200  
Photomicrosensor (Reflective)  
■ Dimensions  
■ Features  
(Unit: mm)  
• Ultra-compact model.  
Note.  
Detector center  
Emitter center  
• PCB surface mounting type.  
• High S/N ratio  
(High light current / Low leakage current)  
Unless otherwise specified tolerances  
are 0.15.  
No burrs dimensions are included in out-  
1.9  
(0.7)  
line dimensions.  
The burrs dimensions are 0.15 MAX.  
Diagonal line indicate the region is part  
Au plating area.  
■ Absolute Maximum Ratings  
(Ta=25°C)  
(0.8)  
(1)  
(0.8)  
3.2  
Item  
Symbol Rated value Unit  
Forward current  
IF  
IFP  
50*1  
500*2  
4
mA  
mA  
V
Recommended Soldering Pattern  
1.1  
Pulse forward  
current  
2-1 2-1.7 2-1  
Emitter  
Reverse voltage  
VR  
E
C
K
A
1.2  
Collector-Emitter  
voltage  
2-0.65  
2-0.45  
VCEO  
30  
V
2-0.65  
Emitter-Collector  
voltage  
0.7  
VECO  
IC  
5
20  
V
Note 1. The shaded portion in the  
above figure may cause short-  
ing. Do not wire in this portion.  
2. The dimensional tolerance for  
the recommended soldering  
pattern is 0.1 mm.  
Detector  
Collector current  
mA  
mW  
Collector dissipa-  
tion  
PC  
50*1  
Operating temperature  
Storage temperature  
Topr  
Tstg  
Tsol  
−25 to +85  
°C  
°C  
°C  
−
40 to +100  
240*3  
Terminal No.  
Name  
Anode  
Internal Circuit  
Reflow soldering temperature  
A
K
C
E
C
A
K
Cathode  
Collector  
Emitter  
*1. Refer to the temperature rating chart if the ambient tem-  
perature exceeds 25°C.  
*2. The pulse width is 10 μs maximum with a frequency of  
E
100 Hz.  
*3. Complete soldering within 10 seconds for reflow soldering.  
■ Electrical and Optical Characteristics (Ta=25°C)  
Value  
Item  
Symbol  
Unit  
Condition  
MIN.  
TYP.  
MAX.  
Forward voltage  
Reverse current  
VF  
I R  
---  
1.2  
1.4  
V
μA  
nm  
μA  
μA  
nA  
nA  
nA  
V
IF = 20 mA  
VR = 4 V  
---  
Emitter  
---  
---  
---  
940  
---  
10  
---  
Peak emission wave-  
length  
λP  
IF = 10 mA, VCE = 2 V, Aluminum-  
deposited surface, d = 4 mm*1  
Light current 1  
Light current 2  
Dark current  
I L1  
200  
150  
---  
1000  
---  
IF = 4 mA, VCE = 2 V, Aluminum-de-  
posited surface, d = 1 mm*1  
I L2  
---  
I D  
2
200  
500  
200  
---  
VCE = 10 V, 0 lx  
IF = 10 mA, VCE = 2 V,  
with no reflection*2  
Detector Leakage current 1  
Leakage current 2  
I LEAK1  
I LEAK2  
VCE (sat)  
λP  
---  
---  
IF = 4 mA, VCE = 2 V,  
with no reflection*2  
---  
---  
Collector-Emitter satu-  
rated voltage  
---  
---  
---  
---  
Peak spectral sensitivi-  
ty wavelength  
---  
850  
30  
30  
---  
nm  
μs  
VCC = 2 V, RL = 1 kΩ,  
Rising time  
Falling time  
t r  
---  
---  
IL = 100 μA, d = 1 mm*1  
VCC = 2 V, RL = 1 kΩ,  
t f  
---  
---  
μs  
IL = 100 μA, d = 1 mm*1  
*1. The letter “d” indicates the distance between the top surface of the sensor and the sensing object.  
*2. Depends on the installed condition of the Photomicrosensor, the detector may receive the sensor's LED light and/or the external light which  
is reflected from surroundings of the Photomicrosensor and /or the background object.  
Please confirm the condition of the Photomicrosensor by actual intended application prior to the mass production use.  
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