Datasheet > EE-SY169B

EE-SY169B

更新时间： 2024-01-21 08:10:45

品牌	Logo	应用领域
欧姆龙 - OMRON		传感器换能器
页数	文件大小	规格书
2页	62K
描述
Diffuse Photoelectric Sensor

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技术参数
数据手册

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EE-SY169B 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.8
传感器/换能器类型：	LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE	Base Number Matches：	1

EE-SY169B 数据手册

E^PhE^oto-^mS^icY^ros1^en6^s9^orB^(Reflective)

Be sure to read Precautions on page 24.

■ Dimensions

Note: All units are in millimeters unless otherwise indicated.

■ Features

• High-quality model with plastic lenses.

• Highly precise sensing range with a tolerance of ± 0.6 mm horizon-

tally and vertically.

3.2

0.5

• With a red LED sensing dyestuff-type links.

• Limited reflective model

• Higher gain than EE-SY169.

2.5

6± 0.3

1.8

• Possible to get the same I_Las EE-SY169 with I_F=10 mA. (half of

EE-SY169 condition)

12.5± 0.3

• Recommended sensing distance = 4.0 mm

8± 0.3

3± 0.5

■ Absolute Maximum Ratings (Ta = 25°C)

Surface A

Item

Symbol

I_F

Rated value

3± 0.5

1± ±

Two, C0.2

1± 0.1 dia.

Emitter

Forward current

40 mA

(see note 1)

0.1 dia.

(see note)

4.8

(see note)

Pulse forward cur- I_FP

rent

300 mA

(see note 2)

9.2± 0.5

3.2

7± 0.1

0.5

Reverse voltage

V_R

3 V

Detector

Collector–Emitter

voltage

V_CEO

30 V

Emitter–Collector

voltage

V_ECO

---

2.5

Collector current

I_C

20 mA

Note: These dimensions are for the

surface A. Other lead wire

pitch dimensions are for the

housing surface.

Unless otherwise specified, the

tolerances are as shown below.

Internal Circuit

Collector dissipa-

tion

P_C

100 mW

(see note 1)

Ambient tem- Operating

Topr

Tstg

Tsol

0°C to 70°C

–20°C to 80°C

260°C

(see note 3)

perature

Storage

Soldering temperature

Dimensions

3 mm max.

Tolerance

Terminal No.

Name

± 0.3

Note: 1. Refer to the temperature rating chart if the ambient temper-

ature exceeds 25°C.

Anode

3 < mm ≤ 6

± 0.375

± 0.45

Cathode

Collector

Emitter

2. The pulse width is 10 μs maximum with a frequency of

6 < mm ≤ 10

10 < mm ≤ 18

18 < mm ≤ 30

100 Hz.

± 0.55

3. Complete soldering within 10 seconds.

± 0.65

■ Electrical and Optical Characteristics (Ta = 25°C)

Item

Symbol

Value

1.85 V typ., 2.3 V max.

0.01 μA typ., 10 μA max.

660 nm typ.

Condition

Emitter

Forward voltage

Reverse current

Peak emission wavelength

Light current

V_F

I_R

I_F= 20 mA

V_R= 3 V

λ_P

I_L

I_F= 20 mA

Detector

160 μA min., 2,000 μA max.

I_F= 10 mA, V_CE= 5 V

White paper with a reflection ratio of

90%, d = 4 mm (see note)

Dark current

I_D

2 nA typ., 200 nA max.

V_CE= 5 V, 0 lx

Leakage current

I_LEAK

2 μA max.

I_F= 20 mA, V_CE= 5 V with no reflec-

tion

Collector–Emitter saturated volt- V_CE(sat)

age

---

Peak spectral sensitivity wave-

length

λ_P

850 nm typ.

V_CE= 5 V

Rising time

Falling time

30 μs typ.

V_CC= 5 V, R_L= 1 kΩ, I_L= 1 mA

_CC= 5 V, R_L= 1 kΩ, I_L= 1 mA

Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.

164

EE-SY169B Photomicrosensor (Reflective)

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