5秒后页面跳转
EDI88257LPA35CB PDF预览

EDI88257LPA35CB

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
WEDC 静态存储器
页数 文件大小 规格书
6页 293K
描述
Standard SRAM, 256KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32

EDI88257LPA35CB 数据手册

 浏览型号EDI88257LPA35CB的Datasheet PDF文件第1页浏览型号EDI88257LPA35CB的Datasheet PDF文件第2页浏览型号EDI88257LPA35CB的Datasheet PDF文件第4页浏览型号EDI88257LPA35CB的Datasheet PDF文件第5页浏览型号EDI88257LPA35CB的Datasheet PDF文件第6页 
EDI88257CA  
White Electronic Designs  
AC CHARACTERISTICS – READ CYCLE  
VCC = 5.0V, Vss = 0V, -55°C TA +125°C  
20ns 25ns  
Symbol  
35ns  
45ns  
55ns  
Parameter  
JEDEC Alt.  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max Units  
Read Cycle Time  
Address Access Time  
Chip Enable Access Time  
Chip Enable to Output in Low Z (1%  
Chip Disable to Output in High Z (1%  
Output Hold from Address Change  
Output Enable to Output Valid  
Output Enable to Output in Low Z (1%  
Output Disable to Output in High Z(1%  
tAVAV  
tAVQV  
tELQV  
tELQX  
tEHQZ  
tAVQX  
tGLQV  
tGLQX  
tGHQZ  
tRC  
tAA  
tACS  
tCLZ  
tCHZ  
tOH  
tOE  
tOLZ  
tOHZ  
20  
25  
35  
45  
55  
ns  
20  
20  
25  
25  
35  
35  
45  
45  
55  
55  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
3
0
0
3
0
0
3
0
0
3
0
0
3
0
0
8
10  
8
10  
12  
10  
15  
15  
15  
20  
25  
20  
20  
25  
20  
0
0
0
0
0
0
0
0
0
0
1. This parameter is guaranteed by design but not tested.  
AC CHARACTERISTICS – WRITE CYCLE  
VCC = 5.0V, VSS = 0V, -55°CTA +125°C  
Symbol  
20ns  
25ns  
35ns  
45ns  
55ns  
Parameter  
JEDEC Alt.  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max Units  
Write Cycle Time  
tAVAV  
tWC  
20  
25  
35  
45  
55  
ns  
Chip Enable to End of Write  
tELWH  
tELEH  
tCW  
tCW  
15  
15  
17  
17  
25  
25  
30  
30  
30  
30  
ns  
ns  
Address Setup Time  
tAVWL  
tAVEL  
tAS  
tAS  
0
0
0
0
0
0
0
0
0
0
ns  
ns  
Address Valid to End of Write  
Write Pulse Width  
tAVWH  
tAW  
tAW  
tWP  
tWP  
15  
15  
15  
15  
17  
17  
17  
17  
25  
25  
25  
25  
30  
30  
30  
30  
30  
30  
30  
30  
ns  
ns  
ns  
ns  
tAVEH  
tWLWH  
tWLEH  
Write Recovery Time  
Data Hold Time  
tWHAX  
tEHAX  
tWR  
tWR  
tDH  
tDH  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
ns  
ns  
ns  
ns  
tWHDX  
tEHDX  
Write to Output in High Z (1%  
Data to Write Time  
tWLQZ  
tWHZ  
tDW  
tDW  
0
10  
10  
30  
0
12  
12  
30  
0
20  
20  
25  
0
25  
25  
30  
0
25  
25  
30  
ns  
ns  
ns  
tDVWH  
tDVEH  
Output Active from End of Write (1%  
tWHQX  
tWLZ  
0
0
0
0
0
ns  
1. This parameter is guaranteed by design but not tested.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
May 2000  
Rev. 2  
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  

与EDI88257LPA35CB相关器件

型号 品牌 获取价格 描述 数据表
EDI88257LPA35CC WEDC

获取价格

Standard SRAM, 256KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257LPA35CI WEDC

获取价格

Standard SRAM, 256KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257LPA35CM WEDC

获取价格

Standard SRAM, 256KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257LPA45CB WEDC

获取价格

Standard SRAM, 256KX8, 45ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257LPA45CI WEDC

获取价格

Standard SRAM, 256KX8, 45ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257LPA55CB WEDC

获取价格

Standard SRAM, 256KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257LPA55CC WEDC

获取价格

Standard SRAM, 256KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257LPA55CI WEDC

获取价格

Standard SRAM, 256KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257LPA55CM WEDC

获取价格

Standard SRAM, 256KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257LPAXCB WEDC

获取价格

256Kx8 Monolithic SRAM