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EDI88128V15MI PDF预览

EDI88128V15MI

更新时间: 2024-02-17 23:36:23
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
5页 115K
描述
x8 SRAM

EDI88128V15MI 技术参数

生命周期:Obsolete包装说明:PLASTIC, SOJ-32
Reach Compliance Code:unknown风险等级:5.82
最长访问时间:15 nsJESD-30 代码:R-PDSO-J32
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:J BEND端子位置:DUAL

EDI88128V15MI 数据手册

 浏览型号EDI88128V15MI的Datasheet PDF文件第2页浏览型号EDI88128V15MI的Datasheet PDF文件第3页浏览型号EDI88128V15MI的Datasheet PDF文件第4页浏览型号EDI88128V15MI的Datasheet PDF文件第5页 
EDI88128V-RP  
HI-RELIABILITY PRODUCT  
128Kx8 Plastic Monolithic 3.3V SRAM  
FEATURES  
WEDC’s ruggedized plastic 128Kx8 SRAM allows the user to  
capitalize on the cost advantage of using a plastic component  
while not sacrificing all of the reliability available in a full military  
device.  
Access Times of 15, 20, 25ns  
TTL Compatible Inputs and Outputs  
Fully Static Operation  
Center Power and Ground Pins  
Industrial and Military Temperature Ranges  
Extended temperature testing is performed with the test patterns  
developed for use on WEDC’s fully compliant 128Kx8 SRAMs.  
WEDC fully characterizes devices to determine the proper test  
patterns for testing at temperature extremes. This is critical  
because the operating characteristics of device change when it is  
operated beyond the commercial temperature range. Using com-  
mercial test methods will not guarantee a device that operates  
reliably in the field at temperature extremes. Users of WEDC’s  
ruggedized plastic benefit from WEDC’s extensive experience in  
characterizing SRAMs for use in military systems.  
JEDEC Approved Revolutionary Pinout  
• 32 pin Plastic SOJ (Package 7)  
Single +3.3V (±10%) Supply Operation  
FIG. 1 PIN CONFIGURATION  
PIN DESCRIPTION  
TOP VIEW  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A0  
A1  
A2  
1
2
3
4
5
6
7
8
9
A16  
A15  
A14  
A13  
OE  
I/O7  
I/O6  
VSS  
I/O0-7  
A0-16  
WE  
CS  
Data Inputs/Outputs  
Address Inputs  
Write Enable  
A3  
CS  
I/O0  
I/O1  
Chip Select  
OE  
Output Enable  
Power (+3.3V ±10%)  
Ground  
VCC  
VSS  
VCC  
VCC  
VSS  
NC  
I/O2 10  
I/O3 11  
WE 12  
A4 13  
A5 14  
A6 15  
A7 16  
I/O5  
I/O4  
A12  
A11  
A10  
A9  
BLOCK DIAGRAM  
Not Connected  
Memory Array  
A8  
Address  
Buffer  
Address  
Decoder  
I/O  
Circuits  
A
Ø-16  
I/OØ-7  
WE  
CS  
OE  
1
July 1999 Rev. 1  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

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