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EDC4BV7244-70JG-S PDF预览

EDC4BV7244-70JG-S

更新时间: 2024-01-30 08:40:52
品牌 Logo 应用领域
富士通 - FUJITSU 光电二极管
页数 文件大小 规格书
8页 134K
描述
Memory IC, 4MX72, CMOS, PDMA168

EDC4BV7244-70JG-S 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM, DIMM168针数:168
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PDMA-N168内存密度:301989888 bit
内存宽度:72端子数量:168
字数:4194304 words字数代码:4000000
最高工作温度:70 °C最低工作温度:
组织:4MX72输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:DIMM
封装等效代码:DIMM168封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY电源:3.3 V
认证状态:Not Qualified刷新周期:4096
自我刷新:NO最大待机电流:0.028 A
子类别:Other Memory ICs最大压摆率:1.504 mA
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

EDC4BV7244-70JG-S 数据手册

 浏览型号EDC4BV7244-70JG-S的Datasheet PDF文件第2页浏览型号EDC4BV7244-70JG-S的Datasheet PDF文件第3页浏览型号EDC4BV7244-70JG-S的Datasheet PDF文件第4页浏览型号EDC4BV7244-70JG-S的Datasheet PDF文件第5页浏览型号EDC4BV7244-70JG-S的Datasheet PDF文件第7页浏览型号EDC4BV7244-70JG-S的Datasheet PDF文件第8页 
November 1996  
Revision 1.0  
EDC4BV724(2/4)-(60/70)(J/T)G-S  
Notes:  
1. An initial pulse of at least 200µs is required after power-up followed by a minimum of eight RAS* cycles before device operation  
is achieved.  
2.  
V
(min.) and V (max.) are reference levels for measuring timing of input signals. Transition times are measured between V  
IH IL IH  
(min.) and V (max.) and are assumed to be 5 ns for all inputs.  
IL  
3. Measure with a load equivalent of 2 TTL loads and 100pF.  
4. Operation within the t (max.) limit ensures that t (max.) limit can be met; t (max.) is specified as a reference point  
RCD  
RCD  
RAC  
only. If t  
is greater than the specified t  
(max) limit, then access time is controlled exclusively by t  
.
RCD  
RCD  
CAC  
5. Assumes that tRCD t  
(max.).  
RACD  
6. This parameter defines the time at which the output achieves open circuit condition and is not referenced to V or V  
.
OH  
OL  
7.  
t
t
is a non restrictive operating parameter. It is included in the data sheet as an electrical characteristic only. If t  
WCS  
(min.) the cycle is an early write cycle and the data out pin will remain at high impedance for the duration of the cycle.  
WCS  
WCS  
8. Either t  
or t must be satisfied for a read cycle.  
RCH  
RRH  
9. These parameters are referenced to the CAS* leading edge in early write cycles.  
10. Operation within the t (max.) limit ensures that t (max.) limit can be met. t (max.) is specified as a reference point only.  
RAD  
RAD  
RAC  
If t  
is greater than the specified t  
(max.) limit, then access time is controlled by t  
.
RAD  
RAD  
AA  
11. Access time is determined by the longer of t , t  
, or t  
.
AA CAC  
ACP  
12.  
t
defines RAS* pulse width in fast page mode cycles.  
RASC  
Physical Dimensions  
168-pin (84x2) 3.3V DIMM  
5.250  
Note  
5.171  
5.014  
0.158  
1
11  
40  
41  
84  
0.118  
2.150  
0.450  
1.450  
0.250  
0.250  
1.700  
2.507  
0.050  
0.004  
4.550 (Ref.)  
5.014  
0.350  
Front View  
Notes:  
1. All dimensions are in inches.  
2. Pin 85 is behind pin 1 on the back side.  
3. Thickness = 0.350 for SOJ devices.  
= 0.280 for TSOP devices.  
Fujitsu Microelectronics, Inc.  
6

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