生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.83 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 25 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 263 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 80 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ED1802P | NXP |
获取价格 |
PNP general purpose transistor | |
ED1802P | PHILIPS |
获取价格 |
Transistor | |
ED1802Q | NXP |
获取价格 |
TRANSISTOR 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal | |
ED1802Q | PHILIPS |
获取价格 |
Transistor | |
ED18310000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block | |
ED18R126-124MBTEL | EOREX |
获取价格 |
ED382R517-2G4SA-H9R is eorex Registered DDR3 SDRAM DIMMs | |
ED18R126-124NCTEL | EOREX |
获取价格 |
ED382R517-2G4SA-H9R is eorex Registered DDR3 SDRAM DIMMs | |
ED18R126-124SARDP | EOREX |
获取价格 |
ED382R517-2G4SA-H9R is eorex Registered DDR3 SDRAM DIMMs | |
ED18R126-124SATEL | EOREX |
获取价格 |
ED382R517-2G4SA-H9R is eorex Registered DDR3 SDRAM DIMMs | |
ED18R126-128MBTEL | EOREX |
获取价格 |
ED382R517-2G4SA-H9R is eorex Registered DDR3 SDRAM DIMMs |