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EBD25RB4ALFA-7A PDF预览

EBD25RB4ALFA-7A

更新时间: 2024-01-11 21:42:24
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率
页数 文件大小 规格书
17页 130K
描述
256MB Registered DDR SDRAM DIMM

EBD25RB4ALFA-7A 数据手册

 浏览型号EBD25RB4ALFA-7A的Datasheet PDF文件第10页浏览型号EBD25RB4ALFA-7A的Datasheet PDF文件第11页浏览型号EBD25RB4ALFA-7A的Datasheet PDF文件第12页浏览型号EBD25RB4ALFA-7A的Datasheet PDF文件第14页浏览型号EBD25RB4ALFA-7A的Datasheet PDF文件第15页浏览型号EBD25RB4ALFA-7A的Datasheet PDF文件第16页 
EBD25RB4ALFA  
Pin Capacitance (TA = 25°C, VDD, VDDQ = 2.5V 0.2V)  
Parameter  
Symbol  
CI1  
Pins  
max.  
TBD  
TBD  
TBD  
Unit  
pF  
Notes  
Address, /RAS, /CAS, /WE,  
/CS, CKE  
Input capacitance  
Input capacitance  
CI2  
CLK, /CLK  
pF  
Data and DQS input/output  
capacitance  
CO  
DQ, DQS, CB  
pF  
AC Characteristics (TA = 0 to +70°C, VDD, VDDQ = 2.5V 0.2V, VSS = 0V)  
Synchronous Characteristics  
-7A  
-75  
-1A  
Parameter  
Symbol min.  
max. min.  
max. min.  
max.  
12  
Unit  
Note  
Clock cycle time  
CL = 2.5  
tCK  
7.5  
12  
7.5  
12  
12  
10  
10  
ns  
CL = 2  
7.5  
12  
10  
12  
ns  
CLK high-level width  
tCH  
tCL  
tAC  
0.45  
0.45  
–0.75  
0.55  
0.55  
0.75  
0.75  
0.45  
0.45  
–0.75  
–0.75  
0.55 0.45  
0.55 0.45  
0.75 –0.8  
0.75 –0.8  
0.55  
0.55  
0.8  
tCK  
tCK  
ns  
CLK low-level width  
DQ output access time from CLK, /CLK  
DQS output access time from CLK, /CLK  
tDQSCK –0.75  
0.8  
ns  
DQS-DQ skew (for DQS and associated DQ  
signals)  
tDQSQ  
0.5  
0.5  
0.5  
0.6  
ns  
DQS-DQ skew (for DQS and all DQ signals) tDQSQA —  
0.5  
0.6  
0.8  
ns  
ns  
Data out low-impedance time from CLK, /CLKtLZ  
–0.75  
0.75  
–0.75  
0.75 –0.8  
0.75 –0.8  
Data out high-impedance time from CLK,  
/CLK  
tHZ  
–0.75  
0.75  
–0.75  
0.8  
ns  
Half clock period  
tHP  
tCH, tCL  
tCH, tCL  
0.9  
tCH, tCL —  
ns  
Read preamble  
tRPRE 0.9  
1.1  
0.6  
1.1  
0.6  
0.9  
0.4  
tHP – 1  
0.6  
0.6  
2
1.1  
0.6  
tCK  
tCK  
ns  
Read postamble  
tRPST  
tQH  
0.4  
0.4  
DQ/DQS output hold time from DQS  
DQ and DM input setup time  
DQ and DM input hold time  
tHP – 0.75 —  
tHP – 0.75 —  
tDS  
0.5  
0.6  
0.5  
0.5  
1.75  
0
0.6  
ns  
tDH  
0.5  
ns  
DQ and DM input pulse width (for each input) tDIPW  
1.75  
ns  
Write preamble setup time  
Write preamble  
tWPRES 0  
0
ns  
tWPRE 0.25  
tWPST 0.4  
0.25  
0.4  
0.25  
0.4  
tCK  
tCK  
Write postamble  
0.6  
Write command to first DQS latching  
transition  
tDQSS 0.75  
1.25  
0.75  
1.25 0.75  
1.25  
tCK  
DQS input high pulse width  
tDQSH 0.35  
tDQSL 0.35  
0.35  
0.35  
0.2  
0.2  
0.9  
0.9  
2.2  
1
0.35  
0.35  
0.2  
0.2  
1.1  
1.1  
2.5  
1
tCK  
tCK  
tCK  
tCK  
ns  
DQS input low pulse width  
DQS falling edge to CLK setup time  
DQS falling edge hold time from CLK  
Address and control input setup time  
Address and control input hold time  
Address and control input pulse width  
Internal write to read command delay  
tDSS  
tDSH  
tIS  
0.2  
0.2  
0.9  
0.9  
2.2  
1
tIH  
ns  
tIPW  
tWTR  
ns  
tCK  
Preliminary Data Sheet E0211E11 (Ver. 1.1)  
13  

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