EBD25RB4ALFA-7A

更新时间： 2024-01-15 15:37:07

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器双倍数据速率
页数	文件大小	规格书
17页	130K
描述
256MB Registered DDR SDRAM DIMM

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数据手册

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EBD25RB4ALFA-7A 数据手册

EBD25RB4ALFA

DC Characteristics 1 (TA = 0 to 70°C, VDD, VDDQ = 2.5V 0.2V, VSS = 0V)

Parameter

Symbol

Grade

max.

Unit

Test condition

Notes

1, 2, 5

-7A

-75

-1A

CKE ≥ VIH,

tRC = tRC (min.)

Operating current (ACTV-PRE) ICC0

TBD

-7A

-75

-1A

-7A

-75

-1A

CKE ≥ VIH, BL = 2,

CL = 3.5,

tRC = tRC (min.)

Operating current (ACTV-READ-

PRE)

ICC1

TBD

1, 2, 5

Idle power down standby current ICC2P

CKE ≤ VIL

-7A

-75

-1A

-7A

-75

-1A

Idle standby current

ICC2N

ICC3P

ICC3N

ICC4R

ICC4W

ICC5

CKE ≥ VIH, /CS ≥ VIH

CKE ≤ VIL

Active power down standby

current

-7A

-75

-1A

-7A

-75

-1A

CKE ≥ VIH, /CS ≥ VIH

tRAS = tRAS (max.)

Active standby current

Operating current

(Burst read operation)

CKE ≥ VIH, BL = 2,

CL = 3.5

1, 2, 5, 6

-7A

-75

-1A

-7A

-75

-1A

Operating current

(Burst write operation)

CKE ≥ VIH, BL = 2,

CL = 3.5

tRFC = tRFC (min.)

Input ≤ VIL or ≥ VIH

Auto refresh current

Self refresh current

-7A

-75

-1A

Input ≥ VDD – 0.2V

Input ≤ 0.2V.

ICC6

Notes. 1. These ICC data are measured under condition that DQ pins are not connected.

2. One bank operation.

3. One bank active.

4. All banks idle.

5. Command/Address transition once per one cycle.

6. Data/Data mask transition twice per one cycle.

7. The ICC data on this table are measured with regard to tCK = tCK (min.) in general.

DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V 0.2V, VSS = 0V)

Parameter

Symbol

min.

max.

Unit

Test condition

Notes

Input leakage current

Output leakage current

Output high current

Output low current

ILI

–10

–5

µA

VDD ≥ VIN ≥ VSS

VDD ≥ VOUT ≥ VSS

VOUT = 1.95V

ILO

IOH

IOL

µA

–15.2

15.2

—

VOUT = 0.35V

Preliminary Data Sheet E0211E11 (Ver. 1.1)

1...9 10 111213 14 15...17

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