Datasheet > DU2810S

DU2810S

更新时间： 2023-12-06 20:09:17

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MACOM		/
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描述
RF Power MOSFET Transistor 10W, 2-175MHz, 28V

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DU2810S 数据手册

DU2810S

RF Power MOSFET Transistor

10 W, 2 - 175 MHz, 28 V

Rev. V1

Features

Package Outline



N-Channel enhancement mode device

DMOS structure

Lower capacitances for broadband operation

Common source configuration

Low noise floor

RoHS Compliant

ABSOLUTE MAXIMUM RATINGS AT 25° C

Parameter

Symbol

V_DS

V_GS

I_DS

Rating

Units

Drain-Source Voltage

Gate-Source Voltage

Drain-Source Current

Power Dissipation

2.8

P_D

Junction Temperature

Storage Temperature

Thermal Resistance

T_J

200

-65 to +150

°C

T_STG

θ_JC

°C

°C/W

LETTER

MILLIMETERS

INCHES

DIM

MIN

24.64

18.29

20.07

9.47

6.22

5.64

2.92

2.29

4.04

6.58

.10

MAX

24.89

18.54

20.83

9.73

6.48

5.79

3.30

2.67

4.55

7.39

.15

MIN

.970

.720

.790

.373

.245

.222

.115

.090

.159

.259

.004

MAX

.980

.730

.820

.383

.255

.228

.130

.105

.179

.291

.006

TYPICAL DEVICE IMPEDANCE

F (MHz)

Z_IN(Ω)

Z_LOAD(Ω)

20 - j11.0

23.0 + j3.0

19.0 +j5.0

14.0 + j6.0

9.0 + j5.0

24.0 - j15.0

18.0 - j18.0

12.0—j19.0

100

200

V_DD= 28V, I_DQ= 100mA, P_OUT= 10.0W

Z_INis the series equivalent input impedance of the device

from gate to source.

Z_LOADis the optimum series equivalent load impedance

as measured from drain to ground.

ELECTRICAL CHARACTERISTICS AT 25°C

Parameter

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Gate Threshold Voltage

Forward Transconductance

Input Capacitance

Symbol Min Max

Units

Test Conditions

BV_DSS

I_DSS

2.0

6.0

V_GS= 0.0 V , I_DS= 4.0 mA

V_GS= 28.0 V , V_GS= 0.0 V

V_GS= 20.0 V , V_DS= 0.0 V

V_DS= 10.0 V , I_DS= 20 mA

µA

I_GSS

V_GS(TH)

G_M

2.0

160

V_DS= 10.0 V , I_DS= 200 mA , Pulsed 80-300 μs

V_DS= 28.0 V , F = 1.0 MHz

C_ISS

4.6

C_OSS

Output Capacitance

V_DS= 28.0 V , F = 1.0 MHz

Reverse Capacitance

Power Gain

C_RSS

G_P

V_DS= 28.0 V , F = 1.0 MHz

V_DD= 28.0 V, I_DQ= 100 mA, P_OUT= 10 W F =175 MHz

Drain Efficiency

ŋ_D

Load Mismatch Tolerance

VSWR-T

20:1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

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