5秒后页面跳转
DU28120V PDF预览

DU28120V

更新时间: 2024-02-21 15:33:48
品牌 Logo 应用领域
泰科 - TE 晶体晶体管射频
页数 文件大小 规格书
3页 182K
描述
RF Power MOSFET Transistor 120W, 2-175MHz, 28V

DU28120V 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.67Is Samacsys:N
Base Number Matches:1

DU28120V 数据手册

 浏览型号DU28120V的Datasheet PDF文件第2页浏览型号DU28120V的Datasheet PDF文件第3页 
DU28120V  
RF Power MOSFET Transistor  
120W, 2-175MHz, 28V  
M/A-COM Products  
Released; RoHS Compliant  
Package Outline  
Features  
N-Channel enhancement mode device  
DMOS structure  
Lower capacitances for broadband operation  
High saturated output power  
Lower noise figure than bipolar devices  
ABSOLUTE MAXIMUM RATINGS AT 25° C  
Parameter  
Symbol  
VDS  
VGS  
IDS  
Rating  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain-Source Current  
Power Dissipation  
65  
20  
V
12  
A
PD  
250  
W
Junction Temperature  
Storage Temperature  
Thermal Resistance  
TJ  
200  
°C  
TSTG  
θJC  
-55 to +150  
0.7  
°C  
°C/W  
TYPICAL DEVICE IMPEDANCE  
F (MHz)  
ZIN ()  
3.0 - j12.5  
1.5 - j8.5  
1.0 - j6.0  
ZLOAD ()  
ZIN is the series equivalent input impedance of the device  
from gate to source.  
30  
8.0 + j6.0  
7.0 +j6.5  
6.5 + j5.0  
50  
Z
LOAD is the optimum series equivalent load impedance as  
100  
measured from drain to ground.  
VDD = 28V, IDQ = 600mA, POUT = 120 W  
ELECTRICAL CHARACTERISTICS AT 25°C  
Parameter  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
Gate Threshold Voltage  
Forward Transconductance  
Input Capacitance  
Symbol  
BVDSS  
IDSS  
Min  
Max  
-
Units  
Test Conditions  
65  
-
V
mA  
µA  
V
VGS = 0.0 V , IDS = 3.0 mA  
6.0  
6.0  
6.0  
-
VGS = 28.0 V , VGS = 0.0 V  
IGSS  
-
VGS = 20.0 V , VDS = 0.0 V  
VGS(TH)  
GM  
2.0  
3.0  
-
VDS = 10.0 V , IDS = 600.0 mA  
S
VDS = 10.0 V , IDS = 6000.0 mA , Δ VGS = 1.0V, 80 μs Pulse  
VDS = 28.0 V , F = 1.0 MHz  
CISS  
270  
240  
48  
-
pF  
pF  
pF  
dB  
%
Output Capacitance  
-
VDS = 28.0 V , F = 1.0 MHz  
COSS  
CRSS  
GP  
Reverse Capacitance  
Power Gain  
-
VDS = 28.0 V , F = 1.0 MHz  
13  
60  
10  
-
VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz  
VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz  
VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz  
VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz  
Drain Efficiency  
ŋD  
-
Return Loss  
RL  
-
%
Load Mismatch Tolerance  
VSWR-T  
30:1  
-
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

与DU28120V相关器件

型号 品牌 描述 获取价格 数据表
DU2812OV TE RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz

获取价格

DU2820 TE RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz

获取价格

DU28200 TE RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz

获取价格

DU28200M TE RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz

获取价格

DU28200M MACOM RF Power MOSFET Transistor 200W, 2-175MHz, 28V

获取价格

DU2820S TE RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz

获取价格