Datasheet > DU2840S

DU2840S

更新时间： 2024-11-10 14:54:03

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
4页	639K
描述
RF Power MOSFET Transistor 40W, 2-175MHz, 28V

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DU2840S 数据手册

DU2840S

RF Power MOSFET Transistor

40 W, 2 - 175 MHz, 28 V

Features

Rev. V1

Package Outline



N-Channel enhancement mode device

DMOS structure

Lower capacitances for broadband operation

High saturated output power

Lower noise figure than bipolar devices

RoHS Compliant

ABSOLUTE MAXIMUM RATINGS AT 25° C

Parameter

Symbol

V_DS

V_GS

I_DS

Rating

Units

Drain-Source Voltage

Gate-Source Voltage

Drain-Source Current

Power Dissipation

125

P_D

Junction Temperature

Storage Temperature

Thermal Resistance

T_J

200

°C

T_STG

θ_JC

-55 to +150

1.4

°C

°C/W

LETTER

DIM

MILLIMETERS

INCHES

TYPICAL DEVICE IMPEDANCE

MIN

24.64

18.29

20.07

9.47

6.22

5.64

2.92

2.29

4.04

6.58

.10

MAX

24.89

18.54

20.83

9.73

6.48

5.79

3.30

2.67

4.55

7.39

.15

MIN

.970

.720

.790

.373

.245

.222

.115

.090

.159

.259

.004

MAX

.980

.730

.820

.383

.255

.228

.130

.105

.179

.291

.006

F (MHz)

Z_IN(Ω)

12.0 - j6.8

10.0 - j6.5

6.0 - j5.5

1.1 - j3.0

Z_LOAD(Ω)

6.5 - j1.5

6.0 - j1.8

5.5 - j1.8

3.5 - j1.8

100

200

V_DD= 28V, I_DQ= 200mA, P_OUT= 40 W

Z_INis the series equivalent input impedance of the device

from gate to source.

Z_LOADis the optimum series equivalent load impedance

as measured from drain to ground.

ELECTRICAL CHARACTERISTICS AT 25°C

Parameter

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Gate Threshold Voltage

Forward Transconductance

Input Capacitance

Symbol

BV_DSS

I_DSS

Min

Max

Units

Test Conditions

V_GS= 0.0 V , I_DS= 10.0 mA

V_GS= 28.0 V , V_GS= 0.0 V

V_GS= 20.0 V , V_DS= 0.0 V

V_DS= 10.0 V , I_DS= 200.0 mA

2.0

6.0

µA

I_GSS

V_GS(TH)

G_M

2.0

V_DS= 10.0 V , I_DS= 2000.0 mA , Δ V_GS= 1.0V, 80 μs Pulse

V_DS= 28.0 V , F = 1.0 MHz

C_ISS

Output Capacitance

V_DS= 28.0 V , F = 1.0 MHz

C_OSS

C_RSS

G_P

Reverse Capacitance

Power Gain

V_DS= 28.0 V , F = 1.0 MHz

V_DD= 28.0 V, I_DQ= 200 mA, P_OUT= 40 W F =175 MHz

Drain Efficiency

ŋ_D

Load Mismatch Tolerance

VSWR-T

30:1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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与DU2840S相关器件

型号	品牌	获取价格	描述	数据表
DU2840V	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 65V V(BR)DSS \| 8A I(D) \| SOT-161VAR
DU2860	TE	获取价格	RF MOSFET Power Transistor, 6OW, 28V 2 - 175 MHz
DU2860T	TE	获取价格	RF MOSFET Power Transistor, 6OW, 28V 2 - 175 MHz
DU2860U	TE	获取价格	RF MOSFET Power Transistor, 6OW, 28V 2 - 175 MHz
DU2860U	MACOM	获取价格	RF Power MOSFET Transistor 60W, 2-175MHz, 28V
DU2880	TE	获取价格	RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
DU2880T	TE	获取价格	RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
DU2880T	MACOM	获取价格	1 RF Power MOSFET Transistor 80W, 2-175MHz, 28V
DU2880U	TE	获取价格	RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz
DU2880U	MACOM	获取价格	RF Power MOSFET Transistor 80W, 2-175MHz, 28V

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