Datasheet > DTC303T1G

DTC303T1G

更新时间： 2024-02-28 06:23:13

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
10页	337K
描述
Bias Resistor Transistors

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中文翻译

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数据手册

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DTC303T1G 数据手册

DTC301~311 / DTC317

DTC322~323

SEMICONDUCTOR

TECHNICAL DATA

Bias Resistor Transistors

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SC-70 /

SOT-323 package which is designed for low power surface mount

applications.

SC-70 / SOT-323

PIN 3

COLLECTOR

(OUTPUT)

R ₁

R₂

PIN 1

BASE

Simplifies Circuit Design

Reduces Board Space

•

(INPUT)

PIN 2

EMITTER

(GROUND)

Reduces Component Count

DEVICE MARKING INFORMATION

See specific marking information in the device marking table on

page 2 of this data sheet.

MAXIMUM RATINGS (T_A= 25 C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

V_CBO

V_CEO

I_C

Value

Unit

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

P_D

Max

Unit

Total Device Dissipation

T_A= 25 C

Derate above 25 C

202 (Note 1.)

310 (Note 2.)

1.6 (Note 1.)

2.5 (Note 2.)

mW/ C

C/W

Thermal Resistance –

Junction-to-Ambient

R_θJA

618 (Note 1.)

403 (Note 2.)

Thermal Resistance –

Junction-to-Lead

R_θJL

280 (Note 1.)

332 (Note 2.)

Junction and Storage

Temperature Range

T_J, T_stg

–55 to +150

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

2008. 03. 10

Revision No : 0

1/10

12 3 4 5 6 7...10

中文翻译

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