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DTC143ZUB PDF预览

DTC143ZUB

更新时间: 2024-11-01 06:54:51
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
3页 78K
描述
100mA / 50V Digital transistors

DTC143ZUB 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.55
JESD-609代码:e1端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
Base Number Matches:1

DTC143ZUB 数据手册

 浏览型号DTC143ZUB的Datasheet PDF文件第2页浏览型号DTC143ZUB的Datasheet PDF文件第3页 
Transistors  
DTC143ZUB  
100mA / 50V Digital transistors  
(with built-in resistors)  
DTC143ZUB  
zApplications  
zDimensions (Unit : mm)  
Inverter, Interface, Driver  
UMT3F  
2.0  
zFeatures  
0.9  
0.32  
(3)  
1) Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external  
input resistors (see equivalent circuit).  
2) The bias resistors consist of thin-film resistors  
with complete isolation to allow negative biasing  
of the input. They also have the advantage of  
almost completely eliminating parasitic effects.  
3) Only the on/off conditions need to be set for  
operation, making the device design easy.  
(1)  
0.65 0.65  
1.3  
(2)  
0.13  
Each lead has same dimensions  
(1) IN  
(2) GND  
(3) OUT  
Abbreviated symbol : 123  
zStructure  
zEquivalent circuit  
NPN silicon epitaxial planar transistor type  
(Resistor built-in)  
OUT  
R1  
IN  
R2  
zPackaging specifications  
GND  
OUT  
Package  
UMT3F  
Taping  
TL  
Packaging type  
Code  
IN  
Part No.  
Basic ordering unit (pieces)  
3000  
GND  
DTC143ZUB  
R1=4.7k, R2=47kΩ  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Supply voltage  
Symbol  
Limits  
Unit  
V
CC  
IN  
50  
V
V
Input voltage  
V
5 to +30  
Collector current  
Output current  
Ic(max)1  
100  
100  
mA  
mA  
mW  
°C  
Io  
2  
Power dissipation  
Junction temperature  
P
D
200  
Tj  
Tstg  
150  
Range of storage temperature  
55 to +150  
°C  
1 Characteristics of built-in transistor  
2 Each terminal mounted on a recommended land  
1/2  

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