Preferred Devices
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
http://onsemi.com
NPN SILICON
BIAS RESISTOR
TRANSISTOR
COLLECTOR
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
2
V
CBO
BASE
V
CEO
50
Vdc
1
I
C
100
mAdc
EMITTER
Total Power Dissipation
P
D
(1.)
@ T = 25°C
350
mW
A
Derate above 25°C
2.81
mW/°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to
Ambient (surface mounted)
R
357
°C/W
θ
JA
1
Operating and Storage
Temperature Range
T , T
–55 to
+150
°C
J
stg
2
3
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
T
L
260
10
°C
Sec
CASE 29
TO–92 (TO–226)
STYLE 1
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
5000/Box
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
10
22
47
47
∞
Preferred devices are recommended choices for future use
and best overall value.
∞
1.0
2.2
4.7
47
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
May, 2000 – Rev. 0
DTC114E/D