DTC143TE

更新时间： 2024-11-14 12:50:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体数字晶体管开关光电二极管
页数	文件大小	规格书
10页	128K
描述
Digital Transistors (BRT) R1 = 4.7 k, R2 = k

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中文翻译

获取价格

数据手册
替代型号

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DTC143TE 数据手册

MUN2216, MMUN2216L,

MUN5216, DTC143TE,

DTC143TM3

Digital Transistors (BRT)

R1 = 4.7 kW, R2 = 8 kW

http://onsemi.com

PIN CONNECTIONS

NPN Transistors with Monolithic Bias

Resistor Network

PIN 3

COLLECTOR

(OUTPUT)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

MARKING DIAGRAMS

• Simplifies Circuit Design

• Reduces Board Space

SC−59

CASE 318D

STYLE 1

XX MG

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable

SOT−23

CASE 318

STYLE 6

XXX MG

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T = 25°C)

SC−70/SOT−323

CASE 419

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

XX MG

CBO

CEO

STYLE 3

Vdc

SC−75

CASE 463

STYLE 1

100

mAdc

Vdc

XX M

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

SOT−723

CASE 631AA

STYLE 1

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

XXX

Specific Device Code

Date Code*

Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Publication Order Number:

August, 2012 − Rev. 0

DTC143T/D

12 3 4 5 6 7...10

中文翻译

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DTC143TE 替代型号

型号	品牌	替代类型	描述	数据表
DTC143TET1	ONSEMI	类似代替	NPN SILICON BIAS RESISTOR TRANSISTORS

与DTC143TE相关器件

型号	品牌	获取价格	描述	数据表
DTC143TE_09	ROHM	获取价格	100mA / 50V Digital transistors (with built-in resistors)
DTC143TE_11	SECOS	获取价格	NPN Digital Transistors (Built-in Resistors)
DTC143TE3	ROHM	获取价格	These are the standard products of "digital transistors" which ROHM invented and marketed
DTC143TE3 (新产品)	ROHM	获取价格	These are the standard products of "digital transistors" which ROHM invented and marketed
DTC143TE3HZG (新产品)	ROHM	获取价格	DTC143TE3HZG是一款车规级高可靠性数字晶体管。
DTC143TEB	ROHM	获取价格	100mA / 50V Digital transistors (with built-in resistors)
DTC143TEBTL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
DTC143TEFRA	ROHM	获取价格	车载数字晶体管
DTC143TEFRATL	ROHM	获取价格	暂无描述
DTC143TET1	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS

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