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DTC143TCA PDF预览

DTC143TCA

更新时间： 2024-11-25 12:26:15
品牌 Logo 应用领域
TSC 晶体信号二极管晶体管
页数 文件大小 规格书
2页 178K
描述
NPN Small Signal Transistor Small Signal Diode

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中文翻译

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DTC143TCA 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.56
Is Samacsys：NBase Number Matches：1

DTC143TCA 数据手册

 浏览型号DTC143TCA的Datasheet PDF文件第2页 
DTC143 TM/TE/TUA/TCA/TSA  
NPN Small Signal Transistor  
Small Signal Diode  
Features  
—Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistor  
(see equivalent circuit).  
—The bias resistors consist of thin -film resistors with  
complete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
—Only the on/off conditions need to be set for  
operation,marking device design easy.  
— Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code.  
Ordering Information  
Part No.  
DTC143 TM  
DTC143 TE  
DTC143 TUA  
DTC143 TCA  
DTC143 TSA  
Package  
SOT-723  
SOT-523  
SOT-323  
SOT-23  
Packing  
8K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
Marking  
03  
03  
03  
03  
TO-92S  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Value  
Type Number  
Power Dissipation  
Symbol  
Units  
TUA TCA  
200  
TM  
TSA  
300  
TE  
150  
PD  
100  
mW  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
IC  
50  
V
V
50  
5
Emitter-base voltage  
Collector Current  
100  
mA  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Symbol Min Typ  
V(BR)CBO 50  
Max  
Condtion  
Ic=50µA  
Ic=1mA  
Unit  
V
V(BR)CEO 50  
V
IE=50µA  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)EBO  
ICBO  
5
V
VCB=50V  
0.5  
0.5  
μA  
VEB=4V  
Emitter cut-off current  
IEBO  
μA  
IC=5mA,IB=0.25mA  
VCE=5V,IC=1mA  
DC Current Gain  
Input Resistance  
VCE(sat)  
hFE  
0.3  
V
100  
600  
Resistance Ratio  
R1  
fT  
3.29  
4.7  
6.11  
KΩ  
VCE=10V,IE=5mA, f=100MHz  
Transition Frequency  
250  
MHz  
Version:A12  
12

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