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DTC143TCA PDF预览

DTC143TCA

更新时间: 2024-01-11 22:58:26
品牌 Logo 应用领域
美微科 - MCC 晶体数字晶体管
页数 文件大小 规格书
3页 346K
描述
Digital Transistors(NPN)

DTC143TCA 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.56
Is Samacsys:N其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTC143TCA 数据手册

 浏览型号DTC143TCA的Datasheet PDF文件第2页浏览型号DTC143TCA的Datasheet PDF文件第3页 
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
DTC143TCA  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Digital Transistors(NPN)  
xꢀ Epitaxial Planar Die Construction  
xꢀ Built-In Biasing Resistors  
xꢀ Marking:03  
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
SOT-23  
A
D
Absolute maximum ratings @ 25к  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Min  
50  
50  
5
Typ  
---  
---  
---  
Max  
---  
---  
---  
---  
Unit  
V
V
V
mA  
3
B
C
1
2
IC  
Collector current  
---  
100  
1.IN  
F
E
Pd  
Power dissipation  
---  
200  
---  
mW  
2.GND  
3.OUT  
Tj  
Junction temperature  
Storage temperature  
---  
150  
---  
---  
ć
ć
Tstg  
-55  
150  
H
G
J
Electrical Characteristics @ 25к  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Parameter  
Min  
50  
50  
5
---  
---  
Typ  
---  
Max  
Unit  
K
(IC=50uA)  
(IC=1mA)  
(IE=50uA)  
Collector-Base Voltage  
Collector-Base Voltage  
Collector-Base Voltage  
---  
---  
V
V
V
uA  
DIMENSIONS  
---  
---  
---  
---  
---  
INCHES  
MIN  
MM  
Collector cut-off current (VCB=50V)  
0.5  
0.5  
DIM  
A
B
C
D
E
MAX  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
IEBO  
Emitter cut-off current (VEB=4V)  
uA  
hFE  
R1  
DC current transfer ratio(VCE=5V,IC=1mA) 100  
Input resistance 3.29  
Transition frequency(Vo=10V,Io=5mA,f=100MHz) ---  
---  
4.7  
250  
600  
6.11  
---  
K  
MHz  
f
T
F
V
CE(sat)  
Collector-emitter saturation voltage  
(IC=5mA,IB=0.25mA)  
---  
---  
0.3  
V
G
H
J
.100  
1.12  
.180  
.51  
.085  
.37  
K
Suggested Solder  
Pad Layout  
.031  
.800  
.035  
.900  
.079  
2.000  
inches  
mm  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/03/25  

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