是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.31 |
Is Samacsys: | N | 其他特性: | DIGITAL, BUILT IN BIAS RESISTOR |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTC114GKAT146 | ROHM |
获取价格 |
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) | |
DTC114GKAT246 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
DTC114GKT146 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, | |
DTC114GL | ETC |
获取价格 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP | |
DTC114GLA | ETC |
获取价格 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP | |
DTC114GLATL3 | ROHM |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTL, 3 | |
DTC114GLATL4 | ROHM |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTL, 3 | |
DTC114GS | ETC |
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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR | |
DTC114GS3 | CYSTEKEC |
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NPN Digital Transistors (Built-in Resistors) | |
DTC114GS3_17 | CYSTEKEC |
获取价格 |
NPN Digital Transistors (Built-in Resistors) |