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DTC114GUA_09 PDF预览

DTC114GUA_09

更新时间: 2024-09-25 06:54:51
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
3页 135K
描述
100mA / 50V Digital transistors (with built-in resistor)

DTC114GUA_09 数据手册

 浏览型号DTC114GUA_09的Datasheet PDF文件第2页浏览型号DTC114GUA_09的Datasheet PDF文件第3页 
100mA / 50V Digital transistors  
(with built-in resistor)  
DTC114GUA / DTC114GKA  
Applications  
Dimensions (Unit : mm)  
Inverter, Interface, Driver  
DTC114GUA  
2.0  
0.9  
0.7  
0.2  
0.3  
Features  
(
)
3
1)The built-in bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input, and parasitic effects  
are almost completely eliminated.  
(
)
( )  
1
2
2)Only the on / off conditions need to be set for operation, making the  
device design easy.  
3)Higher mounting densities can be achieved.  
(1) Emitter  
(2) Base  
(3) Collector  
0.650.65  
1.3  
0.15  
ROHM : UMT3  
EIAJ : SC-70  
Each lead has same dimensions  
Abbreviated symbol : K24  
Structure  
NPN epitaxial planar silicon transistor  
(Resistor built-in type)  
DTC114GKA  
2.9  
0.4  
1.1  
0.8  
( )  
3
Packaging specifications  
UMT3  
Taping  
T106  
SMT3  
Taping  
T146  
3000  
Package  
( )  
2
( )  
1
Packaging type  
Code  
0.95 0.95  
(1) Emitter  
(2) Base  
(3) Collector  
0.15  
1.9  
Part No.  
Basic ordering unit (pieces)  
3000  
ROHM : SMT3  
EIAJ : SC-59  
DTC114GUA  
DTC114GKA  
Each lead has same dimensions  
Abbreviated symbol : K24  
Absolute maximum ratings (Ta=25C)  
Inner circuit  
Parameter  
Collector-base voltage  
Symbol  
Limits  
50  
Unit  
V
VCBO  
VCEO  
VEBO  
50  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
C
E
B
5
V
R
I
C
100  
200  
150  
mA  
mW  
°C  
°C  
Collector Power dissipation  
Junction temperature  
Storage temperature  
Pc  
Tj  
E : Emitter  
C : Collector  
B : Base  
Tstg  
55 to +150  
R=10kΩ  
www.rohm.com  
2009.06 - Rev.C  
1/2  
c
2009 ROHM Co., Ltd. All rights reserved.  

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