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DTC114EUA-TP PDF预览

DTC114EUA-TP

更新时间: 2024-11-28 09:58:15
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
3页 89K
描述
NPN Digital Transistors

DTC114EUA-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC, PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.53
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

DTC114EUA-TP 数据手册

 浏览型号DTC114EUA-TP的Datasheet PDF文件第2页浏览型号DTC114EUA-TP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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TM  
DTC114EUA  
Micro Commercial Components  
Features  
Case Material: Molded Plastic. UL Flammability  
NPN  
Classification Rating 94V-0 and MSL Rating 1  
Built-in bias resistors enable the configuration of an inverter circuit  
Digital Transistors  
without connecting external input resistors  
The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have the  
advantage of almost completely eliminating parasitic effects.  
Only the on/off conditions need to be set for operation, making  
device design easy  
SOT-323  
A
D
Absolute maximum ratings @ 25R  
3
Parameter  
Supply voltage  
Input voltage  
Min  
---  
-10  
---  
---  
---  
Typ  
50  
---  
50  
200  
150  
Max  
---  
40  
100  
---  
---  
Unit  
V
V
Symbol  
VCC  
VIN  
1: GND  
2: IN  
3: OUT  
C
B
IO  
Pd  
Tj  
Output current  
mA  
mW  
?
1
2
Power dissipation  
Junction temperature  
Storage temperature  
F
E
Tstg  
-55  
---  
150  
?
Electrical Characteristics @ 25R  
H
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
IO(off)  
GI  
R1  
Parameter  
Input voltage (VCC=5V, IO=100IA)  
(VO=0.3V, IO=10mA)  
Min  
---  
3.0  
---  
---  
---  
30  
7.0  
0.8  
Typ  
---  
---  
0.1  
---  
---  
---  
10  
1.0  
Max  
0.5  
---  
0.3  
0.88  
0.5  
---  
Unit  
V
V
G
J
K
Output voltage (IO/II=10mA/0.5mA)  
Input current (VI=5V)  
V
DIMENSIONS  
mA  
IA  
K=  
Output current (VCC=50V, VI=0)  
DC current gain (VO=5V, IO=5mA)  
Input resistance  
Resistance ratio  
Transition frequency  
(VCE=10V, IE=5mA, f=100MHz)  
INCHES  
MAX  
MM  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
.087  
.053  
.087  
13  
1.2  
R2/R1  
.026 Nominal  
0.65Nominal  
1.20  
fT  
---  
250  
---  
MHz  
.047  
.012  
.000  
.035  
.004  
.012  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
F
.30  
.000  
.90  
.100  
.30  
G
H
J
MARKING: 24  
K
Suggested Solder  
Pad Layout  
0.70  
0.90  
1.90  
0.65  
0.65  
www.mccsemi.com  
Revision: 2  
2008/01/01  

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