DTC114EUB

更新时间： 2024-09-23 06:54:51

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
3页	78K
描述
100mA / 50V Digital transistors

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DTC114EUB 数据手册

Transistors

DTC114EUB

100mA / 50V Digital transistors

(with built-in resistors)

DTC114EUB

zApplications

zDimensions (Unit : mm)

Inverter, Interface, Driver

UMT3F

2.0

zFeatures

0.9

0.32

(3)

1) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of

almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for

operation, making the device design easy.

(1)

0.65 0.65

1.3

(2)

0.13

Each lead has same dimensions

(1) IN

(2) GND

(3) OUT

Abbreviated symbol : 24

zStructure

zEquivalent circuit

NPN silicon epitaxial planar transistor type

(Resistor built-in)

OUT

zPackaging specifications

GND

OUT

Package

UMT3F

Taping

Packaging type

Code

Part No.

Basic ordering unit (pieces)

3000

GND

DTC114EUB

R1=R2=10kΩ

zAbsolute maximum ratings (Ta=25°C)

Parameter

Supply voltage

Symbol

Limits

Unit

Input voltage

−10 to +40

Collector current

Output current

Ic(max)^∗1

100

°C

∗2

Power dissipation

Junction temperature

200

Tstg

150

Range of storage temperature

−55 to +150

°C

∗1 Characteristics of built-in transistor

∗2 Each terminal mounted on a recommended land

1/2

12 3

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