Datasheet > DTC114ES3_16

DTC114ES3_16

更新时间： 2022-02-26 14:00:17

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
6页	269K
描述
NPN Digital Transistors (Built-in Resistors)

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数据手册

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DTC114ES3_16 数据手册

Spec. No. : C351S3

Issued Date : 2002.06.01

Revised Date : 2016.07.18

Page No. : 2/6

CYStech Electronics Corp.

Absolute Maximum Ratings (Ta=25°C)

Parameter

Supply Voltage

Input Voltage

Symbol

Limits

Unit

VCC

IO(max.)

-10~+40

°C

Output Current

100

200

150

Power Dissipation

Junction Temperature

Storage Temperature

Tstg

-55~+150

°C

Electrical Characteristics (Ta=25°C)

Parameter

Input Voltage

Symbol Min. Typ. Max. Unit

Test Conditions

VI(off)

VI(on)

VO(on)

0.5

0.3

VCC=5V, IO=100μA

VO=0.3V, IO=10mA

IO/II=10mA/0.5mA

Output Voltage

Input Current

0.88 mA VI=5V

Output Current

DC Current Gain

Input Resistance

Resistance Ratio

Transition Frequency

IO(off)

R2/R1

0.8

0.5

1.2

μA

kΩ

VCC=50V, VI=0V

VO=5V, IO=5mA

250

MHz VCE=10V, IC=5mA, f=100MHz *

* Transition frequency of the device

DTC114ES3

CYStek Product Specification

123 4 5 6

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