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DTC114EKA PDF预览

DTC114EKA

更新时间: 2024-01-04 01:23:21
品牌 Logo 应用领域
ETL 晶体数字晶体管
页数 文件大小 规格书
2页 104K
描述
Digital transistors (built-in resistors)

DTC114EKA 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.57
Is Samacsys:N其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC):0.07 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):68
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTC114EKA 数据手册

 浏览型号DTC114EKA的Datasheet PDF文件第2页 
Digital transistors (built-in resistors)  
• Features  
1) Built-in bias resistors enable the configuration of an inverter circuit without  
connecting external input resistors (see equivalent circuit).  
2) The bias resistors consist of thinfilm resistors with complete isolation to  
allow positive biasing of the input. They also have the advantage of almost  
completely eliminating parasitic effects.  
DTC114EKA  
DTC114ECA  
3) Only the on/ off conditions need to be set for operation, making device design  
easy.  
Structure  
+
2.9 0.2  
0.2  
PNP digital transistor (with built-in resistors)  
•Equivalentcircuit  
+
1.1 +-  
0.1  
1.9 0.2  
+
0.95 0.95  
+
0.8 0.1  
(2)  
(1)  
0 ~ 0.1  
(3)  
R1  
OUT  
(1) GND  
(2) IN  
IN  
0.1  
0.06  
0.15 +-  
0.1  
0.05  
R2  
0.4 +-  
(3) OUT  
GND(+)  
OUT  
All terminals have same dimensions  
DTA114EKA  
IN  
GND(+)  
EIAJ: SC— 59  
+
2.9 0.2  
0.2  
0.1  
+
0.95 +-  
1.9 0.2  
+
0.95 0.95  
+
0.45 0.1  
(2)  
(1)  
0 ~ 0.1  
(3)  
0.2Min  
(1) GND  
(2) IN  
0.1  
0.06  
0.15 +-  
0.1  
0.05  
0.4 +-  
(3) OUT  
All terminals have same dimensions  
DTA114ECA  
EIAJ: SOT—23  
Absolute maximum ratings(Ta=25 °C)  
Parameter  
symbol  
limits  
unit  
Supply voltage  
Input voltage  
V
–50  
–10~+40  
50  
V
V
cc  
V
IN  
I O  
I C(Max.)  
Pd  
Output current  
mA  
100  
Power dissipation  
200  
mW  
°C  
Junction temperature  
Storage temperature  
T j  
150  
T stg  
–55~+150  
°C  
P11–1/2  

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