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DTC113ZUA PDF预览

DTC113ZUA

更新时间: 2024-11-26 06:54:51
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
2页 92K
描述
Digital Transistors

DTC113ZUA 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.25Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR RATIO IS 10配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):33JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

DTC113ZUA 数据手册

 浏览型号DTC113ZUA的Datasheet PDF文件第2页 
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
DTC113ZUA  
Features  
xꢀ Epitaxial Planar Die Construction  
xꢀ Complementary NPN Types Available  
xꢀ Built-In Biasing Resistors  
Digital Transistors  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Marking: E21  
x
SOT-323  
Absolute maximum ratings @ 25к  
A
Symbol  
Parameter  
Min  
---  
Typ  
100  
---  
Max  
---  
Unit  
mA  
V
D
IC  
VIN  
Pd  
Tj  
Collector current  
Input voltage  
3
-5  
---  
+10  
---  
Power dissipation  
Junction temperature  
200  
150  
mW  
ć
C
B
---  
---  
1
2
Tstg  
Storage temperature  
-55  
---  
150  
ć
1.IN  
F
E
2.GND  
3.OUT  
Electrical Characteristics @ 25к  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Parameter  
Input voltage (VCC=5V, IO=100­A)  
(VO=0.3V, IO=20mA)  
Min  
---  
Typ  
---  
Max  
0.3  
---  
Unit  
V
3.0  
---  
---  
V
H
G
J
Output voltage (IO=10mA,Ii=0.5mA)  
Input current (VI=5V)  
---  
0.3  
7.2  
0.5  
---  
V
---  
---  
mA  
­A  
K
IO(off)  
GI  
Output current (VCC=50V, VI=0)  
DC current gain (VO=5V, IO=5mA)  
Input resistance  
---  
---  
DIMENSIONS  
33  
0.7  
8
---  
R1  
1.0  
10  
1.3  
12  
K¡  
INCHES  
MAX  
MM  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
MIN  
1.80  
1.15  
MAX  
NOTE  
R2/R1  
Resistance ratio  
.087  
.053  
.087  
2.20  
1.35  
2.20  
Transition frequency  
(VCE=10V, IE=5mA, f=100MHz)  
fT  
---  
250  
---  
MHz  
2.00  
.026 Nominal  
0.65Nominal  
1.20  
.047  
.012  
.000  
.035  
.004  
.012  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
F
.30  
.000  
.90  
G
H
J
.100  
1.00  
.250  
.100  
Suggested.3S0 older.40  
Pad Layout  
K
0.70  
0.90  
1.90  
0.65  
0.65  
www.mccsemi.com  
Revision: 3  
2008/01/01  
1 of 2  

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