Datasheet > DTC114E_12

DTC114E_12

更新时间： 2024-11-28 12:27:27

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
11页	575K
描述
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

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中文翻译

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DTC114E_12 数据手册

DTC114E series

Datasheet

NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

lOutline

VMT3

EMT3F

UMT3F

SMT3

Parameter

V_CC

Value

50V

OUT

GND

I_C(MAX.)

R₁

100mA

10kW

GND

DTC114EM

(SC-105AA)

DTC114EEB

(SC-89)

R₂

EMT3

OUT

lFeatures

1) Built-In Biasing Resistors, R₁= R₂= 10kW.

GND

2) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see inner circuit).

DTC114EUB

(SC-85)

DTC114EE

SOT-416 (SC-75A)

UMT3

3) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of

completely eliminating parasitic effects.

OUT

GND

4) Only the on/off conditions need to be set for

operation, making the circuit design easy.

5) Complementary PNP Types :DTA114E series

6) Complex transistors :EMH11 /UMH11N /IMH11A

DTC114EKA

SOT-346 (SC-59)

DTC114EUA

SOT-323 (SC-70)

lInner circuit

/EMG9 /UMG9N/ FMG9A （NPN type）

7) Lead Free/RoHS Compliant.

lApplication

Switching circuit, Inverter circuit, Interface circuit,

Driver circuit

lPackaging specifications

Package

size

(mm)

Basic

ordering

unit (pcs)

Taping

code

Reel size Tape width

Part No.

Package

Marking

(mm)

DTC114EM

VMT3

EMT3F

EMT3

1212

1616

2021

2928

T2L

180

8,000

3,000

DTC114EEB

DTC114EE

DTC114EUB

DTC114EUA

DTC114EKA

UMT3F

UMT3

SMT3

T106

T146

www.rohm.com

2012.04 - Rev.A

1/10

12 3 4 5 6 7...11

中文翻译

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