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DTA144TCA PDF预览

DTA144TCA

更新时间: 2024-11-14 12:49:19
品牌 Logo 应用领域
TSC 晶体晶体管
页数 文件大小 规格书
3页 209K
描述
PNP Small Signal Transistor

DTA144TCA 数据手册

 浏览型号DTA144TCA的Datasheet PDF文件第2页浏览型号DTA144TCA的Datasheet PDF文件第3页 
DTA144 TM/TE/TUA/TCA/TSA  
PNP Small Signal Transistor  
Small Signal Product  
Features  
Equivalent Circuit  
Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistor  
(see equivalent circuit).  
The bias resistors consist of thin-film resistors with  
complete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
Only the on/off conditions need to be set for  
operation, marking device design easy.  
Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code.  
Ordering Information (example)  
Packing code  
(Green)  
Part No.  
Package  
SOT-723  
Packing  
Packing code  
RM  
Marking  
96  
Manufacture code  
M0  
RMG  
DTA144 TM  
8K / 7" Reel  
Note : Detail please see "Ordering Information(detail, example)" below.  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Value  
TUA / TCA  
200  
Symbol  
Unit  
Parameter  
TM  
TE  
TSA  
300  
Power Dissipation  
PD  
VCBO  
VCEO  
IC  
100  
150  
mW  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
-50  
-50  
V
-100  
mA  
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to + 150  
Notes : 1. Valid provided that electrodes are kept at ambient temperature  
Condtion  
Symbol  
Min  
-50  
-50  
-5  
Typ  
Max  
Unit  
V
Parameter  
Ic= -50μA , IE=0  
Ic= -1mA , IB=0  
IE= -50μA , IC=0  
VCB= -50V , IE=0  
VEB= -4V , IC=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Emitter Cut-Off Current  
DC Current Gain  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
V
V
-0.5  
-0.5  
-0.3  
600  
61.1  
μA  
μA  
V
IEBO  
IC= -5mA , IB= -0.5mA  
VCE= -5V , IC= -1mA  
VCE(sat)  
hFE  
Input Resistance  
100  
300  
47  
Resistance Ratio  
R1  
32.9  
KΩ  
VCE= -10V , IE=5mA , f=100MHz  
Transition Frequency  
fT  
250  
MHz  
Version : B13  

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