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DTA144TE PDF预览

DTA144TE

更新时间: 2024-01-31 10:07:56
品牌 Logo 应用领域
SECOS 晶体数字晶体管光电二极管
页数 文件大小 规格书
2页 148K
描述
PNP Digital Transistors

DTA144TE 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.58
其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.46最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):56JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DTA144TE 数据手册

 浏览型号DTA144TE的Datasheet PDF文件第2页 
DTA144TE / DTA144TUA / DTA144TCA /  
DTA144TSA  
PNP Digital Transistors (Built-in Resistors)  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external  
DTA144TE (SOT-523)  
DTA144TUA (SOT-323)  
input resistors (see equivalent circuit).  
The bias resistors consist of thin-film resistors  
with complete isolation to allow positive biasing  
of the input. They also have the advantage of  
almost completely eliminating parasitic effects.  
Only the on/off conditions need to be set for  
operation, making device design easy.  
EQUIVALENT CIRCUIT  
Addreviated symbol96  
Addreviated symbol96  
DTA144TSA (TO-92S)  
DTA144TCA (SOT-23)  
Addreviated symbol96  
ABSOLUTE MAXIMUM RATINGS at (TA = 25°C unless otherwise noted)  
Ratings  
Parameter  
Symbol  
Unit  
E
UA  
CA  
SA  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
-50  
-50  
-5  
V
V
V
Collector Current-Continuous  
Collector Dissipation  
-100  
200  
mA  
mW  
PC  
150  
300  
Junction & Storage temperature  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS at (TA = 25°C unless otherwise noted)  
Min.  
Typ.  
Max.  
Parameter  
Symbol  
Unit  
Test Conditions  
Collector-base breakdown voltage  
V(BR)CBO  
-50  
-
-
IC= -50A, IE= 0  
V
Collector-emitter  
breakdown voltage  
V(BR)CEO  
-50  
-
-
IC= -1mA, IB= 0  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
V(BR)EBO  
ICBO  
-5  
-
-
-
V
IE= -50A, IC=0  
VCB= -50V, IE=0  
VEB= -4V, IC=0  
-
-
-0.5  
-0.5  
600  
A  
A  
IEBO  
-
hFE  
100  
300  
VCE= -5V, IC= -1mA  
Collector-emitter  
saturation voltage  
VCE(sat)  
-
-
-0.3  
V
IC= -5mA, IB= -0.5mA  
V
CE= -10V, IC= -5mA,  
Transition frequency  
Input resistor  
fT  
-
250  
47  
-
MHz  
f= 100MHz  
R1  
32.9  
61.1  
k  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
11-Aug-2010 Rev. A  
Page 1 of 2  

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