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DTA124EUA-TP-HF PDF预览

DTA124EUA-TP-HF

更新时间: 2024-11-13 20:44:23
品牌 Logo 应用领域
美微科 - MCC 开关光电二极管晶体管
页数 文件大小 规格书
3页 201K
描述
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

DTA124EUA-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.59
其他特性:BUILT IN BIAS RESISTANCE RATIO IS 1配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):56JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

DTA124EUA-TP-HF 数据手册

 浏览型号DTA124EUA-TP-HF的Datasheet PDF文件第2页浏览型号DTA124EUA-TP-HF的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
DTA124EUA  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
PNP  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Built-in bias resistors enable the configuration of an inverter circuit  
without connecting external input resistors  
Digital Transistors  
The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have the  
advantage of almost completely eliminating parasitic effects.  
Only the on/off conditions need to be set for operation, making  
SOT-323  
A
device design easy  
D
·
Halogen free available upon request by adding suffix "-HF"  
Absolute maximum ratings @ 25R  
3
1: IN  
2: GND  
3: OUT  
Symbol  
VCC  
VIN  
Parameter  
Supply voltage  
Input voltage  
Min  
---  
-40  
Typ  
-50  
---  
Max  
---  
10  
Unit  
V
V
C
B
1
2
IO  
IC(MAX)  
Pd  
Tj  
-30  
-100  
200  
150  
---  
Output current  
---  
---  
mA  
F
E
Power dissipation  
Junction temperature  
Storage temperature  
---  
---  
---  
---  
mW  
?
Tstg  
-55  
150  
?
H
G
J
Electrical Characteristics @ 25R  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
IO(off)  
GI  
R1  
Parameter  
Min  
---  
-3.0  
---  
---  
---  
56  
15.4  
0.8  
Typ  
---  
---  
---  
---  
---  
---  
22  
1.0  
Max  
-0.5  
---  
-0.3  
-0.36  
-0.5  
---  
Unit  
V
V
K
Input voltage (VCC=-5V, IO=-100IA)  
DIMENSIONS  
(VO=-0.2V, IO=-5mA)  
Output voltage (IO/II=-10mA/-0.5mA  
Input current (VI=-5V)  
V
INCHES  
MAX  
MM  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.083  
MIN  
1.80  
1.15  
2.10  
MAX  
2.20  
1.35  
2.45  
NOTE  
mA  
IA  
.087  
.053  
.096  
Output current (VCC=-50V, VI=0)  
DC current gain (VO=-5V, IO=-5mA)  
Input resistance  
Resistance ratio  
Transition frequency  
.026 Nominal  
0.65Nominal  
1.20  
.30  
.000  
.90  
.100  
.15  
28.6  
1.2  
K=  
.047  
.012  
.000  
.035  
.004  
.006  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
R2/R1  
F
G
H
J
fT  
---  
250  
---  
MHz  
(VCE=-10V, IE=5mA, f=100MHz)  
K
Suggested Solder  
Pad Layout  
0.70  
*Marking: 15  
0.90  
mm  
1.90  
0.65  
0.65  
www.mccsemi.com  
1 of 3  
Revision: C  
2013/09/24  

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