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DTA114TXV3T1 PDF预览

DTA114TXV3T1

更新时间: 2024-11-13 03:13:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体数字晶体管
页数 文件大小 规格书
10页 125K
描述
Digital Transistors (BRT)

DTA114TXV3T1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-89包装说明:LEAD FREE, CASE 463C-03, SC-89, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.39
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):160JESD-30 代码:R-PDSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTA114TXV3T1 数据手册

 浏览型号DTA114TXV3T1的Datasheet PDF文件第2页浏览型号DTA114TXV3T1的Datasheet PDF文件第3页浏览型号DTA114TXV3T1的Datasheet PDF文件第4页浏览型号DTA114TXV3T1的Datasheet PDF文件第5页浏览型号DTA114TXV3T1的Datasheet PDF文件第6页浏览型号DTA114TXV3T1的Datasheet PDF文件第7页 
DTA114EXV3T1 Series  
Preferred Devices  
Digital Transistors (BRT)  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The digital transistor  
contains a single transistor with a monolithic bias network consisting  
of two resistors; a series base resistor and a base−emitter resistor. The  
digital transistor eliminates these individual components by  
integrating them into a single device. The use of a digital transistor can  
reduce both system cost and board space. The device is housed in the  
SC−89 package which is designed for low power surface mount  
applications.  
http://onsemi.com  
PNP SILICON  
DIGITAL  
TRANSISTORS  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
Available in 8 mm, 7 inch/3000 Unit Tape & Reel  
Lead−Free Plating (Pure Sn)  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
CBO  
V
CEO  
3
50  
Vdc  
2
I
C
100  
mAdc  
1
SC−89  
CASE 463C  
STYLE 1  
MARKING DIAGRAM  
3
xx D  
1
2
xx = Specific Device Code  
(See Marking Table on page 2)  
D = Date Code  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
January, 2004 − Rev. 0  
DTA114EXV3T1/D  

DTA114TXV3T1 替代型号

型号 品牌 替代类型 描述 数据表
DTA114EXV3T1 ONSEMI

完全替代

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DTA114YXV3T1 ONSEMI

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