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DTA114TE PDF预览

DTA114TE

更新时间: 2024-11-13 12:51:15
品牌 Logo 应用领域
威伦 - WILLAS 晶体晶体管光电二极管
页数 文件大小 规格书
2页 300K
描述
PNP Digital Transistor

DTA114TE 数据手册

 浏览型号DTA114TE的Datasheet PDF文件第2页 
WILLAS  
DTA114TE  
PNP Digital Transistor  
Features  
SOT-523  
Pb-Free package is available  
·
RoHS product for packing code suffix ”G”  
Halogen free product for packing code suffix “H”  
.067(1.70)  
.059(1.50)  
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
xꢀ Built-in bias resistors enable the configuration of an inverter circuit  
without connecting external input resistors (see equivalent circuit)  
xꢀ The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have the  
advantage of almost completely eliminating parasitic effects  
xꢀ Only the on/off conditions need to be set for operation, making  
device design easy  
.014(0.35)  
.010(0.25)  
.043(1.10)  
.035(0.90)  
Absolute Maximum Ratings  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
Value  
-50  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base voltage  
VCEO  
VEBO  
IC  
-50  
-5  
V
V
Collector Current-Continuous  
-100  
mA  
Collector Dissipation  
PC  
150  
mW  
к
к
Junction Temperature Range  
Storage Temperature Range  
TJ  
-55~150  
-55~150  
TSTG  
.008(0.20)  
.004(0.10)  
Electrical Characteristics  
.004(0.10)MAX.  
Sym  
Parameter  
Collector-Base Breakdown Voltage  
(IC=-50uA, IE=0)  
Min  
Typ  
Max  
Unit  
V(BR)CBO  
-50  
---  
---  
V
Collector-Emitter Breakdown Voltage  
(IC=-1mA, IB=0)  
V(BR)CEO  
V(BR)EBO  
ICBO  
-50  
-5  
---  
---  
---  
V
.014(0.35)  
.006(0.15)  
Emitter-Base Breakdown Voltage  
(IE=-50uA, IC=0)  
---  
V
Collector Cut-off Current  
(VCB=-50V, IE=0)  
---  
---  
-0.5  
-0.5  
600  
-0.3  
uA  
uA  
---  
V
Emitter Cut-off Current  
(VEB=-4V, IC=0)  
Dimensions in inches and (millimeters)  
IEBO  
---  
---  
DC Current Gain  
(VCE=-5V, IC=-1mA)  
hFE  
100  
---  
250  
---  
Collector-Emitter Saturation Voltage  
(IC=-10mA, IB=-1mA)  
VCE(sat)  
R1  
Input Resistor  
13  
---  
K¡  
7
10  
Transition Frequency  
(VCE=-10V, IC=-5mA, f=100MHz)  
fT  
---  
250  
MHz  
*Marking: 94  
2012-10  
WILLAS ELECTRONIC CORP.  

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