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DSB1A100 PDF预览

DSB1A100

更新时间: 2024-11-05 03:30:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管肖特基二极管
页数 文件大小 规格书
2页 42K
描述
1 AMP SCHOTTKY BARRIER RECTIFIERS

DSB1A100 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-41
包装说明:HERMETIC SEALED PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.19
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-XALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V表面贴装:NO
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSB1A100 数据手册

 浏览型号DSB1A100的Datasheet PDF文件第2页 
1N5819  
and  
• 1N5819-1 AND 1N6761-1AVAILABLE IN JAN,JANTX, JANTXV,  
AND JANS PER MIL-PRF-19500/586  
DSB5817 and DSB5818  
and  
1N6759 thru 1N6761  
and  
• 1 AMP SCHOTTKY BARRIER RECTIFIERS  
• HERMETICALLY SEALED  
• METALLURGICALLY BONDED  
DSB1A20 thru DSB1A100  
MAXIMUM RATINGS  
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
Average Rectified Forward Current: 1.0 AMP @T +55°C, L = 3/8”  
L
Derating: 14 mA / °C above T  
+55°C, L = 3/8”  
L =  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
WORKING PEAK  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
AT RATED VOLTAGE  
CDI  
TYPE  
REVERSE  
VOLTAGE  
MAXIMUM FORWARD VOLTAGE  
NUMBER  
V
RWM  
V
@0.1A  
V
@1.0A  
V
@3.1A  
I
@25°C  
mA  
I
R
@100°C  
mA  
F
F
F
R
VOLTS  
20  
VOLTS  
0.36  
VOLTS  
0.60  
VOLTS  
0.9  
DSB5817  
DSB5818  
1N5819  
0.10  
0.10  
0.10  
0.05  
5.0  
FIGURE 1  
30  
0.36  
0.60  
0.9  
5.0  
40  
0.36  
0.60  
0.9  
5.0  
DESIGN DATA  
J,JX,JV & JS  
5819-1  
45  
0.34  
0.49  
0.8  
5.0  
1N6759  
1N6760  
1N6761  
60  
80  
0.38  
0.38  
0.38  
0.38  
0.69  
0.69  
0.69  
0.69  
NA  
NA  
NA  
NA  
0.10  
0.10  
0.10  
0.10  
6.0  
6.0  
CASE: Hermetically sealed, DO – 41  
LEAD MATERIAL: Copper clad steel  
LEAD FINISH: Tin / Lead  
100  
100  
6.0  
J,JX,JV & JS  
6761-1  
12.0  
THERMAL RESISTANCE: (R  
): 70  
OJEC  
°C/W maximum at L = .375 inch  
DSB1A20  
DSB1A30  
DSB1A40  
DSB1A50  
DSB1A60  
DSB1A80  
DSB1A100  
20  
30  
0.36  
0.36  
0.36  
0.36  
0.38  
0.38  
0.38  
0.60  
0.60  
0.60  
0.60  
0.69  
0.69  
0.69  
0.9  
0.9  
0.9  
0.9  
NA  
NA  
NA  
0.10  
0.10  
0.10  
0.10  
0.10  
0.10  
0.10  
5.0  
5.0  
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 12  
OJX  
40  
5.0  
50  
5.0  
POLARITY: Cathode end is banded.  
MOUNTING POSITION: Any  
60  
12.0  
12.0  
12.0  
80  
100  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (978) 689-0803  
WEBSITE: http://www.microsemi.com  
65  

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