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DSA2002-R PDF预览

DSA2002-R

更新时间: 2024-10-29 08:09:39
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 479K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINI3-G3-B, 3 PIN

DSA2002-R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.76
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzBase Number Matches:1

DSA2002-R 数据手册

 浏览型号DSA2002-R的Datasheet PDF文件第2页浏览型号DSA2002-R的Datasheet PDF文件第3页浏览型号DSA2002-R的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DSA2002  
Silicon PNP epitaxial planar type  
For general amplication  
Complementary to DSC2002  
Features  
Package  
Code  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Mini3-G3-B-B  
Pin Name  
1. Base  
2. Emitter  
3. Collector  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Marking Symbol: A2  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–60  
Unit  
V
–50  
V
–5  
V
–500  
–1  
mA  
A
Peak collector current  
ICP  
Collector power dissipation  
Junction temperature  
PC  
200  
mW  
°C  
°C  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
–60  
–50  
–5  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
VCBO IC = –10 mA, IE = 0  
VCEO IC = –2 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
V
V
ICBO  
VCB = –20 V, IE = 0  
– 0.1  
340  
mA  
2
*
hFE1  
VCE = –10 V, IC = –150 mA  
VCE = –10 V, IC = –500 mA  
120  
40  
1
Forward current transfer ratio *  
hFE2  
1
Collector-emitter saturation voltage *  
VCE(sat) IC = –300 mA, IB = –30 mA  
VBE(sat) IC = –300 mA, IB = –30 mA  
– 0.2  
– 0.9  
130  
– 0.6  
– 1.5  
V
V
1
Base-emitter saturation voltage *  
Transition frequency  
fT  
VCE = –10 V, IC = –50 mA  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
7.3  
15  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classication  
*
Code  
Rank  
R
R
S
S
0
No-rank  
120 to 340  
A2  
hFE1  
120 to 240  
A2R  
170 to 340  
A2S  
Marking Symbol  
Product of no-rank is not classied and have no marking symbol for rank.  
Publication date: January 2011  
Ver. CED  
1

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