5秒后页面跳转
DSA17G PDF预览

DSA17G

更新时间: 2024-11-29 21:00:35
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
2页 36K
描述
1.7A, SILICON, RECTIFIER DIODE

DSA17G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:1 week
风险等级:5.55其他特性:HIGH RELIABILITY
应用:POWER外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e6最大非重复峰值正向电流:60 A
元件数量:1相数:1
端子数量:2最大输出电流:1.7 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Bismuth (Sn/Bi)
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

DSA17G 数据手册

 浏览型号DSA17G的Datasheet PDF文件第2页 
Ordering number : ENN633E  
Diffused Junction Type Silicon Diode  
DSA17  
1.7A Power Rectifier  
Features  
Package Dimensions  
unit : mm  
Plastic molded structure.  
Glass passivation for high reliability.  
Peak reverse voltage : V =200, 600V.  
1085  
RM  
[DSA17]  
Average rectified current : I =1.7A.  
O
Cathode mark  
4.4  
26.0  
7.0  
26.0  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Peak Reverse Voltage  
Symbol  
Conditions  
DSA17C  
200  
DSA17G  
Unit  
V
V
RM  
600  
Average Recitified Current  
Surge Forward Current  
Junction Temperature  
Storage Temperature  
I
Ta=40°C  
50Hz sine wave, 1 cycle  
1.7  
60  
A
O
I
A
FSM  
Tj  
150  
°C  
°C  
Tstg  
--30 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.05  
10  
Forward Voltage  
Reverse Current  
V
I =1.7A  
V
F
F
I
V
: At each V  
RM  
μA  
R
R
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
41000 GI IM / 53098 HA (KT) / D218 TA, TS No.633-1/2  

DSA17G 替代型号

型号 品牌 替代类型 描述 数据表
DSA17 SANYO

功能相似

1.7A Power Rectifier

与DSA17G相关器件

型号 品牌 获取价格 描述 数据表
DSA1812C101JN DUBILIER

获取价格

SURFACE MOUNT CERAMIC SURFACE MOUNT MULTI - LAYER DS
DSA1812C103JN DUBILIER

获取价格

SURFACE MOUNT CERAMIC SURFACE MOUNT MULTI - LAYER DS
DSA1812C104JN DUBILIER

获取价格

SURFACE MOUNT CERAMIC SURFACE MOUNT MULTI - LAYER DS
DSA1812X101JN DUBILIER

获取价格

SURFACE MOUNT CERAMIC SURFACE MOUNT MULTI - LAYER DS
DSA1812X103JN DUBILIER

获取价格

SURFACE MOUNT CERAMIC SURFACE MOUNT MULTI - LAYER DS
DSA1812X104JN DUBILIER

获取价格

SURFACE MOUNT CERAMIC SURFACE MOUNT MULTI - LAYER DS
DSA2 IXYS

获取价格

Diode,
DSA200100L PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DSA2001-R PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
DSA2001S0L PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236A