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DS26LV31TMX PDF预览

DS26LV31TMX

更新时间: 2024-11-27 12:28:19
品牌 Logo 应用领域
德州仪器 - TI 驱动器
页数 文件大小 规格书
14页 839K
描述
DS26LV31T 3V Enhanced CMOS Quad Differential Line Driver

DS26LV31TMX 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP16,.25
针数:16Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:7.8差分输出:YES
驱动器位数:4高电平输入电流最大值:0.00001 A
输入特性:STANDARD接口集成电路类型:LINE DRIVER
接口标准:EIA-422-B; TIA-422-B; V.11JESD-30 代码:R-PDSO-G16
JESD-609代码:e0长度:9.9 mm
湿度敏感等级:1功能数量:4
端子数量:16最高工作温度:85 °C
最低工作温度:-40 °C最小输出摆幅:2 V
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235电源:3.3 V
认证状态:Not Qualified最大接收延迟:
座面最大高度:1.75 mm子类别:Line Driver or Receivers
标称供电电压:3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30最大传输延迟:16 ns
宽度:3.9 mmBase Number Matches:1

DS26LV31TMX 数据手册

 浏览型号DS26LV31TMX的Datasheet PDF文件第2页浏览型号DS26LV31TMX的Datasheet PDF文件第3页浏览型号DS26LV31TMX的Datasheet PDF文件第4页浏览型号DS26LV31TMX的Datasheet PDF文件第5页浏览型号DS26LV31TMX的Datasheet PDF文件第6页浏览型号DS26LV31TMX的Datasheet PDF文件第7页 
DS26LV31T  
www.ti.com  
SNLS114C MARCH 1999REVISED FEBRUARY 2013  
DS26LV31T 3V Enhanced CMOS Quad Differential Line Driver  
Check for Samples: DS26LV31T  
1
FEATURES  
Standard Microcircuit Drawing (SMD) 5962-  
98584  
2
Industrial Product Meets TIA/EIA-422-B (RS-  
422) and ITU-T V.11 Recommendation  
DESCRIPTION  
Military Product Conforms to TIA/EIA-422-B  
(RS-422)  
The DS26LV31T is a high-speed quad differential  
CMOS driver that meets the requirements of both  
TIA/EIA-422-B and ITU-T V.11. The CMOS  
DS26LV31T features low static ICC of 100 μA MAX  
which makes it ideal for battery powered and power  
conscious applications.  
Interoperable with Existing 5V RS-422  
Networks  
Industrial and Military temperature Range  
Guaranteed VOD of 2V min Over Operating  
Conditions  
Differential outputs have the same VOD guarantee  
(2V) as the 5V version.  
Balanced Output Crossover for Low EMI  
(Typical Within 40 mV of 50% Voltage Level)  
The EN and EN* inputs allow active Low or active  
High control of the TRI-STATE outputs. The enables  
are common to all four drivers. Protection diodes  
protect all the driver inputs against electrostatic  
discharge. Outputs have enhanced ESD protection  
providing greater than 7 kV tolerance. The driver and  
enable inputs (DI, EN, EN*) are compatible with low  
voltage LVTTL and LVCMOS devices.  
Low Power Design (330 μW @ 3.3V static)  
ESD 7 kV on Cable I/O Pins (HBM)  
Guaranteed AC Parameter:  
Maximum Driver Skew: 2 ns  
Maximum Transition Time: 10 ns  
Pin Compatible with DS26C31  
Available in SOIC and CLGA Packaging  
Connection Diagram  
Figure 1. Dual-In-Line Package  
Top View  
See Package D (R-PDSO-G16)  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 1999–2013, Texas Instruments Incorporated  

DS26LV31TMX 替代型号

型号 品牌 替代类型 描述 数据表
DS26LV31TMX/NOPB TI

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DS26LV31T 3V Enhanced CMOS Quad Differential Line Driver
DS26LV31TM TI

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DS26LV31T 3V Enhanced CMOS Quad Differential Line Driver

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