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DS1808 PDF预览

DS1808

更新时间: 2024-11-05 22:50:47
品牌 Logo 应用领域
美信 - MAXIM /
页数 文件大小 规格书
1页 14K
描述
Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N+ESD,TEOS Spacer, Passivation w/Nov TEOS Oxide-Nitride

DS1808 数据手册

  
DS1808  
Reliability Report:  
1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N+ESD,TEOS Spacer,  
Passivation w/Nov TEOS Oxide-Nitride  
Process:  
Metal:  
Al / 0.5% Cu / 0.8% Si  
225 Å  
60%  
0.7  
16  
Gate Ox Thickness:  
Pin Count:  
25  
°C  
Cf:  
Ea:  
Tuse:  
Vuse:  
ATP (Amkor, PI)  
SOIC  
Assembly:  
Package:  
Body Size:  
Summary Data with Chi-Square Distribution Assumed.  
Stress Ambient Temperature and Voltage to  
Field Ambient Temperature And Voltage  
5.5 Volts  
0
b:  
150x1.4  
VEHICLE  
DESCRIPTION  
REV DATE CODE CONDITION  
READPOINT  
QUANTITY FAILS FILE # DEVICE HRS  
HIGH TEMPERATURE OPERATING LIFE  
HOURS  
HOURS  
HIGH VOLTAGE LIFE DS1808  
DS1808  
A2  
0133  
0133  
125C, 6.0 V (PSA) & +13.2 V (PS  
6
80  
80  
0
0
452720  
A2  
125C, 6.0 V (PSA) & +13.2 V (PS 336  
24899612  
0
2.54E+07  
DEVICE HRS:  
FAILURE RATE MTBF (yrs):  
TOTALS:  
FITs:  
3158  
36  
PRODUCT  
REV  
DIE SIZE (x)  
DIE SIZE (y)  
No. of Transistors  
DS1808  
A2  
159  
80  
1700  
Thursday, May 16, 2002  

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