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DS1809-100 PDF预览

DS1809-100

更新时间: 2024-09-15 22:34:51
品牌 Logo 应用领域
达拉斯 - DALLAS /
页数 文件大小 规格书
8页 90K
描述
Dallastat, 64-position linear taper

DS1809-100 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:DIP-8Reach Compliance Code:unknown
风险等级:5.63模拟集成电路 - 其他类型:ANALOG CIRCUIT
JESD-30 代码:R-PDIP-T8JESD-609代码:e0
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:DUAL
Base Number Matches:1

DS1809-100 数据手册

 浏览型号DS1809-100的Datasheet PDF文件第2页浏览型号DS1809-100的Datasheet PDF文件第3页浏览型号DS1809-100的Datasheet PDF文件第4页浏览型号DS1809-100的Datasheet PDF文件第5页浏览型号DS1809-100的Datasheet PDF文件第6页浏览型号DS1809-100的Datasheet PDF文件第7页 
DS1809  
Dallastat  
www.dalsemi.com  
FEATURES  
§ 64-position linear taper  
PIN ASSIGNMENT  
§ Two nonvolatile wiper storage options  
§ Operates from +2.7 to +5.5-volt supplies  
§ Operating Temperature Range:  
- Industrial: -40°C to +85°C  
§ Electronic interface provides either digital or  
pushbutton control  
RH  
UC  
STR  
RL  
1
2
3
4
8
7
6
5
VCC  
DC  
RW  
GND  
§ Low-cost alternative to mechanical solutions  
§ Standard Resistance Values  
8-Pin DIP  
8-Pin SOIC (150-mil)  
8-Pin µSOP (118-mil)  
- DS1809-010  
- DS1809-050  
- DS1809-100  
10 kW  
50 kW  
100 kW  
PIN DESCIPTION  
VCC  
RH  
RL  
- Supply Voltage  
- High End of Resistor  
- Low End of Resistor  
- Wiper Terminal  
- Up Control Input  
- Down Control Input  
- Storage Enable Input  
- Ground  
RW  
UC  
DC  
STR  
GND  
DESCRIPTION  
The DS1809 Dallastat is a nonvolatile digitally controlled potentiometer that provides 64 uniform wiper  
positions over the entire resistor range; including the high-end and low-end terminals of the device. The  
DS1809 is a low power, low voltage device capable of operating from power supplies of +2.7V to +5.5V.  
The device is ideal for low-power, portable, or battery powered applications.  
Wiper position is maintained in the absence of power. This is accomplished via the use of an EEPROM  
cell array. The device provides for two storage methods, which include an auto-store capability and a  
command-initiated storage function. The EEPROM cell array is specified to accept greater than 50k  
writes. Storage of the wiper position is discussed in the Wiper Storage section of this datasheet.  
Wiper positioning is controlled via a patented dual pushbutton (or contact closure) interface. For simple  
pushbutton-controlled applications or CPU-generated control signals, external debounce circuitry is not  
needed. The control interface will support both repetitive pulse inputs and continuous pulse (“push-and-  
hold”) inputs. Repetitive pulse and continuous pulse control as well as timing diagrams are discussed in  
the section entitled OPERATION.”  
1 of 8  
101999  

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