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DS1225Y-200IND PDF预览

DS1225Y-200IND

更新时间: 2024-12-01 14:49:07
品牌 Logo 应用领域
美信 - MAXIM 静态存储器内存集成电路
页数 文件大小 规格书
8页 151K
描述
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, 0.720 INCH, DIP-28

DS1225Y-200IND 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:MODULE包装说明:DIP, DIP28,.6
针数:28Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.24最长访问时间:200 ns
其他特性:10 YEAR DATA RETENTIONJESD-30 代码:R-XDMA-P28
JESD-609代码:e0内存密度:65536 bit
内存集成电路类型:NON-VOLATILE SRAM MODULE内存宽度:8
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:UNSPECIFIED封装代码:DIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified最大待机电流:0.005 A
子类别:SRAMs最大压摆率:0.085 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DS1225Y-200IND 数据手册

 浏览型号DS1225Y-200IND的Datasheet PDF文件第2页浏览型号DS1225Y-200IND的Datasheet PDF文件第3页浏览型号DS1225Y-200IND的Datasheet PDF文件第4页浏览型号DS1225Y-200IND的Datasheet PDF文件第5页浏览型号DS1225Y-200IND的Datasheet PDF文件第6页浏览型号DS1225Y-200IND的Datasheet PDF文件第7页 
DS1225Y  
64k Nonvolatile SRAM  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
. 10 years minimum data retention in the  
absence of external power  
VCC  
WE  
NC  
NC  
A12  
A7  
A6  
A5  
A4  
1
28  
27  
2
3
4
26  
25  
. Data is automatically protected during power  
loss  
. Directly replaces 2k x 8 volatile static RAM  
or EEPROM  
. Unlimited write cycles  
. Low-power CMOS  
A8  
A9  
5
6
24  
23  
A11  
OE  
A3  
A2  
7
8
22  
21  
A10  
CE  
A1  
A0  
9
10  
20  
19  
DQ7  
DQ6  
. JEDEC standard 28-pin DIP package  
. Read and write access times as fast as 150 ns  
. Full ±10% operating range  
. Optional industrial temperature range of  
-40°C to +85°C, designated IND  
DQ0  
11  
12  
18  
17  
DQ1  
DQ2  
GND  
DQ5  
DQ4  
DQ3  
13  
14  
16  
15  
24-Pin ENCAPSULATED PACKAGE  
720-mil EXTENDED  
PIN DESCRIPTION  
A0-A12  
- Address Inputs  
DQ0-DQ7  
- Data In/Data Out  
CE  
- Chip Enable  
- Write Enable  
WE  
OE  
VCC  
GND  
- Output Enable  
- Power (+5V)  
- Ground  
DESCRIPTION  
The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192  
words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which  
constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium  
energy source is automatically switched on and write protection is unconditionally enabled to prevent  
data corruption. The NV SRAM can be used in place of existing 8k x 8 SRAMs directly conforming to  
the popular bytewide 28-pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or  
the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the  
number of write cycles that can be executed and no additional support circuitry is required for micro-  
processor interfacing.  
1 of 8  
121907  

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