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DRC2115T0L PDF预览

DRC2115T0L

更新时间: 2024-11-24 21:18:31
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 493K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN

DRC2115T0L 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:7.82最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):160JEDEC-95代码:TO-236AA
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DRC2115T0L 数据手册

 浏览型号DRC2115T0L的Datasheet PDF文件第2页浏览型号DRC2115T0L的Datasheet PDF文件第3页浏览型号DRC2115T0L的Datasheet PDF文件第4页 
Doc No. TT4-EA-12304  
Revision. 2  
Transistors with Built-in Resistor  
DRC2115T0L  
DRC2115T0L  
Silicon NPN epitaxial planar type  
Unit: mm  
For digital circuits  
2.9  
Complementary to DRA2115T  
0.4  
0.16  
3
Features  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage Vce(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
1
2
1.1  
Marking Symbol:  
Packaging  
NT  
(0.95)(0.95)  
1.9  
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  
1. Base  
2. Emitter  
3. Collector  
Panasonic  
JEITA  
Mini3-G3-B  
SC-59A  
TO-236AA/SOT-23  
Absolute Maximum Ratings Ta = 25 C  
Code  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
50  
100  
200  
Unit  
V
V
mA  
mW  
°C  
Internal Connection  
Total power dissipation  
Junction temperature  
PT  
Tj  
C
R1  
B
150  
Operating ambient temperature  
Storage temperature  
Topr  
Tstg  
-40 to +85  
-55 to +150  
°C  
°C  
E
Resistance  
value  
100  
R1  
k  
Electrical Characteristics Ta = 25 C 3 C  
Parameter  
Symbol  
VCBO IC = 10 μA, IE = 0  
VCEO IC = 2 mA, IB = 0  
ICBO  
ICEO  
IEBO  
hFE  
Conditions  
Min Typ Max  
50  
50  
Unit  
V
V
μA  
μA  
mA  
-
V
V
V
k  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
0.01  
VCE = 10 V, IC = 5 mA  
160  
4.3  
460  
0.25  
Collector-emitter saturation voltage  
VCE(sat) IC = 10 mA, IB = 0.5 mA  
Vi(on) VCE = 0.2 V, IC = 5 mA  
Vi(off) VCE = 5 V, IC = 100 μA  
R1  
Input voltage  
0.4  
Input resistance  
-30% 100 +30%  
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.  
Note) 1.  
Page 1 of 3  
Established : 2010-02-04  
Revised : 2014-03-07  

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