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DRC2523E PDF预览

DRC2523E

更新时间: 2024-11-20 20:02:35
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 401K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINI3-G3-B, 3 PIN

DRC2523E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.73其他特性:BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DRC2523E 数据手册

 浏览型号DRC2523E的Datasheet PDF文件第2页浏览型号DRC2523E的Datasheet PDF文件第3页浏览型号DRC2523E的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DRC2523E  
Silicon NPN epitaxial planar type  
For digital circuits  
Complementary to DRA2523E  
Package  
Features  
Contributes to miniaturization of sets, reduction of component count.  
Code  
Eco-friendly Halogen-free package  
Mini3-G3-B  
Pin Name  
1: Base  
Packaging  
2: Emitter  
3: Collector  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Absolute Maximum Ratings T = 25°C  
a
Marking Symbol: T1  
Internal Connection  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
C
E
R1  
50  
V
B
500  
mA  
mW  
°C  
R2  
Total power dissipation  
PT  
200  
Junction temperature  
Tj  
150  
Resistance  
value  
R1  
R2  
2.2  
2.2  
kΩ  
kΩ  
Storage temperature  
T
stg  
–55 to +150  
°C  
Electrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = 10 µA, IE = 0  
VCEO IC = 2 mA, IB = 0  
V
V
50  
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
1
1
5
µA  
µA  
mA  
V
VCE = 10 V, IC = 100 mA  
40  
VCE(sat) IC = 100 mA, IB = 5 mA  
VI(on) VCE = 0.2 V, IC = 50 mA  
0.25  
2.6  
V
Input voltage (OFF)  
VI(off) VCE = 5 V, IC = 100 µA  
0.7  
+30%  
1.2  
V
Input resistance  
R1  
–30%  
0.8  
2.2  
1.0  
kΩ  
Resistance ratio  
R1 / R2  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: May 2010  
ZJH00399BED  
1

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