是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | DPAK-3/2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 23 weeks |
风险等级: | 0.84 | 其他特性: | HIGH RELIABILITY |
雪崩能效等级(Eas): | 52.8 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 95 A | 最大漏源导通电阻: | 0.0045 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 150 A | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMTH4005SPS | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4005SPS_17 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4005SPS-13 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4005SPSQ | DIODES |
获取价格 |
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4005SPSQ-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, 20.9A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, | |
DMTH4007LK3 | DIODES |
获取价格 |
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4007LK3-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, 16.8A I(D), 40V, 0.0098ohm, 1-Element, N-Channel, Silicon, | |
DMTH4007LK3Q | DIODES |
获取价格 |
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4007LK3Q-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, | |
DMTH4007LPS | DIODES |
获取价格 |
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET |