是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F5 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 22 weeks |
风险等级: | 1.67 | 其他特性: | HIGH RELIABILITY |
雪崩能效等级(Eas): | 132.3 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 20.9 A | 最大漏源导通电阻: | 0.0037 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F5 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 150 A |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMTH4007LK3 | DIODES |
获取价格 |
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4007LK3-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, 16.8A I(D), 40V, 0.0098ohm, 1-Element, N-Channel, Silicon, | |
DMTH4007LK3Q | DIODES |
获取价格 |
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4007LK3Q-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, | |
DMTH4007LPS | DIODES |
获取价格 |
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4007LPS-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, 15.5A I(D), 40V, 0.0098ohm, 1-Element, N-Channel, Silicon, | |
DMTH4007LPSQ | DIODES |
获取价格 |
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4007SK3 | DIODES |
获取价格 |
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4007SK3-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, | |
DMTH4007SPD | DIODES |
获取价格 |
40V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOS |