是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F5 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 22 weeks |
风险等级: | 1.66 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 雪崩能效等级(Eas): | 20 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 15.5 A |
最大漏源导通电阻: | 0.0098 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F5 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMTH4007LPSQ | DIODES |
获取价格 |
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4007SK3 | DIODES |
获取价格 |
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4007SK3-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, | |
DMTH4007SPD | DIODES |
获取价格 |
40V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOS | |
DMTH4007SPDQ | DIODES |
获取价格 |
40V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MO | |
DMTH4007SPDQ-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, | |
DMTH4007SPS | DIODES |
获取价格 |
40V N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4007SPS-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, | |
DMTH4007SPSQ | DIODES |
获取价格 |
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMTH4007SPSQ-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, |