Datasheet > DMT32M4LFG

DMT32M4LFG

更新时间： 2023-12-06 20:11:35

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	489K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

获取价格

数据手册

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DMT32M4LFG 数据手册

DMT32M4LFG

2.5

0.0035

0.003

0.0025

0.002

0.0015

0.001

0.0005

V_GS= 4.5V, I_D= 15A

I_D= 1mA

1.5

V_GS= 10V, I_D= 20A

I_D= 250μA

0.5

-50 -25

100 125 150

-50 -25

T_J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction Temperature

100 125 150

T_J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Junction

Temperature

100000

f = 1MHz

V_GS= 0V

10000

1000

100

C_iss

C_oss

C_rss

T_J= 150^oC

T_J= 85^oC

T_J= 125^oC

T_J= 25^oC

T_J= -55^oC

0.3

0.6

0.9

1.2

1.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

1000

100

R_DS(ON)

Limited

P_W= 1µs

P_W= 10µs

P_W= 100µs

P_W= 1ms

V_DS= 15V, I_D= 20A

P_W= 10ms

T_J(Max)= 150℃

T_C= 25℃

Single Pulse

DUT on Infinite

Heatsink

P_W= 100ms

P_W= 1s

V_GS= 10V

0.1

Q_g(nC)

Figure 11. Gate Charge

0.1

100

1000

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

5 of 8

www.diodes.com

March 2021

DMT32M4LFG

Document number: DS43422 Rev. 2 - 2

1 2 3 456 7 8

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