Datasheet > DMT32M4LFG

DMT32M4LFG

更新时间： 2023-12-06 20:11:35

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	489K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMT32M4LFG 数据手册

DMT32M4LFG

Marking Information

SK3 = Product Type Marking Code

YWX = Date Code Marking

Y = Year (ex: 1 = 2021)

W = Week (ex: a = Week 27; z Represents Week 52 and 53)

X = Internal Code (ex: U = Monday)

SK3

Date Code Key

Year

2021

2022

2023

2024

2025

2026

2027

2028

2029

2030

2031

2032

Code

Week

Code

1-26

27-52

A-Z

a-z

Internal Code

Code

Sun

Mon

Tue

Wed

Thu

Fri

Sat

Maximum Ratings (@ T_C= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

±20

V_GSS

100

T_C= +25°C

T_C= +70°C

Continuous Drain Current (Note 6) V_GS= 10V

I_D

T_A= +25°C

T_A= +70°C

2.8

440

Maximum Continuous Body Diode Forward Current (Note 5)

I_S

Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%)

I_DM

I_SM

I_AS

E_AS

Pulsed Body Diode Forward Current (380μs Pulse, Duty Cycle = 1%)

Avalanche Current, L = 0.1mH

172

Avalanche Energy, L = 0.1mH

Thermal Characteristics

Characteristic

Symbol

P_D

Value

1.1

Unit

Total Power Dissipation (Note 5)

T_A= +25°C

T_C= +25°C

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

115

2.6

°C/W

R_θJA

P_D

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

°C/W

°C

R_θJA

3.9

R_θJC

T_J,T_STG

-55 to +150

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

2 of 8

www.diodes.com

March 2021

DMT32M4LFG

Document number: DS43422 Rev. 2 - 2

123 4 5 6 7 8

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