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DMP2021UTS

更新时间： 2023-12-06 20:11:23
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美台 - DIODES /
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7页 314K
描述
P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP2021UTS 数据手册

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DMP2021UTS  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
-20  
Unit  
V
Gate-Source Voltage  
±10  
V
VGSS  
Steady  
State  
TA = +25°C  
-7.4  
-5.9  
A
A
ID  
TA = +70°C  
TC = +25°C  
TC = +70°C  
Continuous Drain Current (Note 6) VGS = -4.5V  
Steady  
State  
-18  
-14  
ID  
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)  
A
A
IDM  
Continuous Source-Drain Diode Current (Note 6)  
TA = +25°C  
IS  
ISM  
IAS  
Pulsed Source-Drain Diode Current (10μs Pulse, Duty Cycle = 1%)  
Avalanche Current (Note 7) L = 0.1mH  
A
A
Avalanche Energy (Note 7) L = 0.1mH  
mJ  
EAS  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
PD  
R  
Value  
0.9  
Unit  
W
Total Power Dissipation (Note 5)  
TA = +25°C  
Steady State  
TA = +25°C  
Steady State  
Steady State  
Thermal Resistance, Junction to Ambient (Note 5)  
Total Power Dissipation (Note 6)  
146  
°C/W  
W
JA  
1.3  
95  
PD  
Thermal Resistance, Junction to Ambient (Note 6)  
Thermal Resistance, Junction to Case (Note 6)  
Operating and Storage Temperature Range  
R  
JA  
°C/W  
°C  
16  
R  
JC  
-55 to +150  
TJ, TSTG  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 8)  
Drain-Source Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
-20  
—
—
—
—
—
-1  
V
BVDSS  
IDSS  
VGS = 0V, ID = -250μA  
VDS = -20V, VGS = 0V  
VGS = ±8V, VDS = 0V  
µA  
µA  
Zero Gate Voltage Drain Current TJ = +25°C  
Gate-Source Leakage  
—
±10  
IGSS  
ON CHARACTERISTICS (Note 8)  
Gate Threshold Voltage  
-0.35  
—
—
12  
-1.0  
16  
V
mΩ  
V
VGS(TH)  
RDS(ON)  
VSD  
VDS = VGS, ID = -250μA  
VGS = -4.5V, ID = -4.5A  
VGS = -2.5V, ID = -4.5A  
VGS = -1.8V, ID = -2.5A  
VGS = 0V, IS = -1.0A  
Static Drain-Source On-Resistance  
15  
22  
19  
40  
—
Diode Forward Voltage  
DYNAMIC CHARACTERISTICS (Note 9)  
Input Capacitance  
-0.8  
-1.2  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2,760  
262  
220  
16  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Ciss  
Coss  
Crss  
Rg  
VDS = -15V, VGS = 0V,  
f = 1.0MHz  
Output Capacitance  
pF  
Reverse Transfer Capacitance  
Gate Resistance  
Ω
VDS = 0V, VGS = 0V, f = 1MHz  
34  
Total Gate Charge (VGS = -4.5V)  
Total Gate Charge (VGS = -8V)  
Gate-Source Charge  
Qg  
59  
Qg  
nC  
ns  
VDS = -15V, ID = -4.0A  
3.5  
8.3  
7.5  
25  
Qgs  
Qgd  
tD(ON)  
tR  
Gate-Drain Charge  
Turn-On Delay Time  
Turn-On Rise Time  
VDS = -15V, VGS = -4.5V,  
RG = 1Ω, ID = -4.0A  
125  
96  
Turn-Off Delay Time  
tD(OFF)  
tF  
Turn-Off Fall Time  
Reverse Recovery Time  
Reverse Recovery Charge  
48  
ns  
tRR  
IF = -1.0A, di/dt = 100A/μs  
IF = -1.0A, di/dt = 100A/μs  
33  
nC  
QRR  
Notes:  
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.  
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C .  
8. Short duration pulse test used to minimize self-heating effect.  
9. Guaranteed by design. Not subject to product testing.  
2 of 7  
www.diodes.com  
July 2017  
© Diodes Incorporated  
DMP2021UTS  
Document number: DS39575 Rev. 2 - 2  
1234567

中文翻译

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