是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | CSP |
包装说明: | GREEN, WL-CSP1010H6-4, 4 PIN | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 20 weeks | 风险等级: | 1.73 |
其他特性: | HIGH RELIABILITY | 配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
最小漏源击穿电压: | 12 V | 最大漏极电流 (Abs) (ID): | 2.6 A |
最大漏极电流 (ID): | 2.4 A | 最大漏源导通电阻: | 0.152 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | S-PBGA-B4 |
JESD-609代码: | e1 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | SQUARE |
封装形式: | GRID ARRAY | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.82 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | BALL |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMP10H088SPS | DIODES |
获取价格 |
100V P-CHANNEL ENHANCEMENT MODE MOSFET | |
DMP10H400SE | DIODES |
获取价格 |
P-CHANNEL ENHANCEMENT MODE MOSFET | |
DMP10H400SE-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met | |
DMP10H400SEQ | DIODES |
获取价格 |
100V P-CHANNEL ENHANCEMENT MODE MOSFET | |
DMP10H400SEQ-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, | |
DMP10H400SK3 | DIODES |
获取价格 |
P-CHANNEL ENHANCEMENT MODE MOSFET | |
DMP10H4D2S | DIODES |
获取价格 |
100V P-CHANNEL ENHANCEMENT MODE MOSFET | |
DMP10H4D2S_17 | DIODES |
获取价格 |
100V P-CHANNEL ENHANCEMENT MODE MOSFET | |
DMP10H4D2S-13 | DIODES |
获取价格 |
100V P-CHANNEL ENHANCEMENT MODE MOSFET | |
DMP10H4D2S-7 | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.27A I(D), 100V, 1-Element, P-Channel, Silicon, Met |