Datasheet > DMN2991UFZQ

DMN2991UFZQ

更新时间： 2023-12-06 20:11:30

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	704K
描述
20V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2991UFZQ 数据手册

DMN2991UFZQ

1.0

0.8

0.6

0.4

0.2

0.0

0.8

0.6

0.4

0.2

V_GS= 2.0V

V_GS= 2.5V

V_GS= 3.0V

V_DS= 5V

V_GS= 4.0V

V_GS= 4.5V

V_GS= 1.5V

85℃

25℃

-55℃

V_GS= 1.2V

150℃

125℃

0.5

1.5

2.5

V_GS, GATE-SOURCE VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

Figure 2. Typical Transfer Characteristic

1.4

1.2

1.8

1.6

1.4

1.2

I_D= 100mA

I_D= 50mA

V_GS= 1.8V

I_D= 20mA

0.8

0.6

0.4

0.2

V_GS= 2.5V

V_GS= 4.5V

0.8

0.6

0.4

0.2

0.4

0.6

0.8

V_GS, GATE-SOURCE VOLTAGE (V)

I_D, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. Typical Transfer Characteristic

1.8

1.6

1.4

1.2

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

V_GS= 4.5V, I_D= 100mA

V_GS= 4.5V

150℃

V_GS= 2.5V, I_D= 50mA

125℃

85℃

25℃

V_GS= 1.8V, I_D= 20mA

-55℃

0.8

0.6

0.2

0.4

0.6

0.8

-50 -25

75 100 125 150

I_D, DRAIN CURRENT (A)

T_J, JUNCTION TEMPERATURE (℃)

Figure 5. Typical On-Resistance vs. Drain Current and

Junction Temperature

Figure 6. On-Resistance Variation with Junction

Temperature

3 of 7

www.diodes.com

January 2022

DMN2991UFZQ

Document number: DS43744 Rev. 2 - 2

1 234 5 6 7

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