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DMN2050LQ PDF预览

DMN2050LQ

更新时间: 2023-12-06 20:11:13
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
6页 397K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2050LQ 数据手册

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DMN2050LQ  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VGSS  
ID  
Value  
20  
Unit  
V
Gate-Source Voltage  
±12  
5.9  
V
Drain Current (Note 6)  
A
Pulsed Drain Current (Note 7)  
21  
A
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 6)  
Symbol  
PD  
Value  
1.4  
Unit  
W
Thermal Resistance, Junction to Ambient (Note 6)  
Operating and Storage Temperature Range  
90  
°C/W  
°C  
RθJA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note7)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
VGS = 0V, ID = 250µA  
20  
1
V
BVDSS  
IDSS  
µA  
nA  
VDS = 20V, VGS = 0V  
IGSS  
100  
VGS = 12V, VDS = 0V  
ON CHARACTERISTICS (Note 7)  
Gate Threshold Voltage  
0.45  
24  
42  
68  
8
1.4  
29  
V
VGS(TH)  
VDS = VGS, ID = 250µA  
VGS = 4.5V, ID = 5.0A  
VGS = 2.5V, ID = 3.1A  
VGS = 2.0V, ID = 1.5A  
VDS = 5V, ID = 2.1A  
VGS = 0V, IS = 2.0A  
Static Drain-Source On-Resistance  
50  
RDS(ON)  
m  
100  
Forward Transfer Admittance  
Diode Forward Voltage (Note 8)  
DYNAMIC CHARACTERISTICS (Note 9)  
Input Capacitance  
s
|Yfs|  
VSD  
0.9  
1.4  
V
  
532  
144  
117  
1.3  
  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
Rg  
VDS = 10V, VGS = 0V  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS = 0V, VGS = 0V, f = 1.0MHz  
SWITCHING CHARACTERISTICS (Note 9)  
Total Gate Charge  
  
  
  
6.7  
0.8  
3.0  
  
  
  
Qg  
Qgs  
Qgd  
VDS = 10V, VGS = 4.5V, ID = 5.0A  
VDS = 10V, VGS = 4.5V, ID = 5.0A  
VDS = 10V, VGS = 4.5V, ID = 5.0A  
Gate-Source Charge  
nC  
Gate-Drain Charge  
Notes:  
6. Device mounted on FR-4 PCB, on 2oz Copper pad layout with RθJA = 90°C/W.  
7. Repetitive rating, pulse width limited by junction temperature.  
8. Short duration pulse test used to minimize self-heating effect.  
9. Guaranteed by design. Not subject to production testing.  
2 of 6  
www.diodes.com  
May 2019  
© Diodes Incorporated  
DMN2050LQ  
Document number: DS41550 Rev. 2 - 2  

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