DMN2050LQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
VGSS
ID
Value
20
Unit
V
Gate-Source Voltage
±12
5.9
V
Drain Current (Note 6)
A
Pulsed Drain Current (Note 7)
21
A
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Symbol
PD
Value
1.4
Unit
W
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
90
°C/W
°C
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
VGS = 0V, ID = 250µA
20
—
—
—
—
—
—
1
V
BVDSS
IDSS
µA
nA
VDS = 20V, VGS = 0V
IGSS
100
VGS = 12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.45
—
24
42
68
8
1.4
29
V
VGS(TH)
VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 5.0A
VGS = 2.5V, ID = 3.1A
VGS = 2.0V, ID = 1.5A
VDS = 5V, ID = 2.1A
VGS = 0V, IS = 2.0A
Static Drain-Source On-Resistance
—
50
RDS(ON)
m
100
—
Forward Transfer Admittance
Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
—
s
|Yfs|
VSD
0.9
1.4
V
—
—
—
—
532
144
117
1.3
—
—
—
—
pF
pF
pF
Ciss
Coss
Crss
Rg
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 9)
Total Gate Charge
—
—
—
6.7
0.8
3.0
—
—
—
Qg
Qgs
Qgd
VDS = 10V, VGS = 4.5V, ID = 5.0A
VDS = 10V, VGS = 4.5V, ID = 5.0A
VDS = 10V, VGS = 4.5V, ID = 5.0A
Gate-Source Charge
nC
Gate-Drain Charge
Notes:
6. Device mounted on FR-4 PCB, on 2oz Copper pad layout with RθJA = 90°C/W.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
2 of 6
www.diodes.com
May 2019
© Diodes Incorporated
DMN2050LQ
Document number: DS41550 Rev. 2 - 2