Datasheet > DMN2075U

DMN2075U

更新时间： 2024-02-02 13:55:26

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	135K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance

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DMN2075U 数据手册

Product specification

DMN2075U

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

•

Case: SOT-23

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Terminals Connections: See Diagram Below

Weight: 0.008 grams (approximate)

Drain

Gate

Source

Internal Schematic

TOP VIEW

Maximum Ratings ^@T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

±8

Units

Gate-Source Voltage

V_GSS

T_A= 25°C

_A= 70°C

Steady

State

4.2

3.4

Continuous Drain Current (Note 3)

Pulsed Drain Current (Note 4)

I_D

I_DM

Thermal Characteristics

Characteristic

Symbol

P_D

Value

0.8

Unit

Power Dissipation (Note 3)

156

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= 25°C

Operating and Storage Temperature Range

R_θJA

-55 to +150

_J,T_STG

Notes:

1. No purposefully added lead.

2. Device mounted on FR-4 PCB, with minimum recommended pad layout.

3. Repetitive rating, pulse width limited by junction temperature.

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sales@twtysemi.com

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